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v‑sb‑te phase change material system for phase change memory and preparation method thereof

A phase change memory and phase change material technology, which is applied to the V-Sb-Te phase change material system and the field of its preparation, can solve the problem that the performance requirements of the phase change material cannot be met, the thermal stability of the amorphous state is poor, and the crystallization activation energy is small. and other problems, to achieve the best data retention and phase stability, good scalability, and fast phase transition.

Active Publication Date: 2017-10-27
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the biggest weakness of the Sb-Te system is that the crystallization activation energy is small, which makes its amorphous state have poor thermal stability, which greatly limits the application and development of the Sb-Te system in the direction of high data retention.
Therefore, in the actual industrial mass production process, the applicability of the Sb-Te material system is improved by element doping, but the existing element doping modification often cannot meet the performance requirements of phase change materials in the field.

Method used

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  • v‑sb‑te phase change material system for phase change memory and preparation method thereof
  • v‑sb‑te phase change material system for phase change memory and preparation method thereof
  • v‑sb‑te phase change material system for phase change memory and preparation method thereof

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Embodiment 1

[0023] This embodiment provides a V-Sb-Te phase change material system for phase change memory, wherein the V-Sb-Te phase change material system is formed by doping V on the basis of the Sb-Te phase change material system , whose general chemical formula is V 100-x-y Sb x Te y , wherein, 0.5≤x / y≤4 (where x / y represents the ratio of x to y), and 50≤x+y≤99.99 (where x+y represents the sum of x and y).

[0024] Preferably, at the V 100-x-y Sb x Te y Among them, 1.6≤x / y≤4, wherein, the value range of x is 20≤x≤80, the value range of y is 10≤y≤65, and the atomic percentage of V is not more than 50%. In this embodiment, in the V—Sb—Te phase change material system, the atomic percentage of V is 0.1%˜30%.

[0025] The V-Sb-Te phase-change material system can realize the reversible change of optical reflectivity under the action of laser pulse, and the reversible change of resistivity under the action of electric pulse, so as to realize the function of storing data.

[0026] Thi...

Embodiment 2

[0033] This embodiment provides a V-Sb-Te phase change material for phase change memory, the general chemical formula of the V-Sb-Te phase change material is V 30 Sb 28 Te 42 , and using Sb 2 Te 3 Co-sputtering of alloy target and V elemental target to obtain V 30 Sb 28 Te 42 For thin films, different thicknesses of materials can be controlled by controlling the sputtering time. In this embodiment, sputtering is under 99.999% argon atmosphere, Sb 2 Te 3 The alloy target is sputtered with a DC power supply, and the V target is sputtered with a radio frequency power supply. The sputtering time is 20 minutes, and the obtained V 30 Sb 28 Te 42 The film thickness is about 120nm. where, to obtain V 30 Sb 28 Te 42 Compared with the traditional Sb-Te phase change material, the performance of the thin film is improved in terms of thermal stability and data retention ability.

Embodiment 3

[0035] This embodiment provides a V-Sb-Te phase change material for phase change memory, the general chemical formula of the V-Sb-Te phase change material is V 1 Sb 40 Te 59 , and using Sb 2 Te 3 Co-sputtering of alloy target and V elemental target to obtain V 1 Sb 40 Te 59 For thin films, different thicknesses of materials can be controlled by controlling the sputtering time. In this embodiment, sputtering is under 99.999% argon atmosphere, Sb 2 Te 3 The alloy target is sputtered with a DC power supply, and the V target is sputtered with a radio frequency power supply. The sputtering time is 20 minutes, and the obtained V 1 Sb 40 Te 59 The film thickness is about 120nm. where, to obtain V 1 Sb 40 Te 59 Compared with the traditional Sb-Te phase change material, the performance of the thin film is improved in terms of thermal stability and data retention ability.

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Abstract

The present invention provides a V-Sb-Te phase-change material system for phase-change memory and a preparation method thereof, wherein the V-Sb-Te phase-change material system is based on the Sb-Te phase-change material system doped V, and its general chemical formula is V100‑x‑ySbxTey, wherein, 0.5≤x / y≤4, and 50≤x+y≤99.99. The V-Sb-Te phase change material system of the present invention has fast phase change speed and low operating power consumption, and has better data retention and phase stability, and can greatly expand the application range of the Sb-Te phase change material system . At the same time, the V element can greatly reduce the grain size of the Sb-Te material system, making the material have better shrinkability, which also reduces the volume change rate of the material before and after the phase transition, and improves the fatigue resistance of the material . In addition, the V element has good compatibility with the Sb-Te material system, and the entire material behaves as a homogeneous phase.

Description

technical field [0001] The invention relates to a phase-change material and a preparation method, in particular to a V-Sb-Te phase-change material system used in a phase-change memory and a preparation method thereof. Background technique [0002] Phase-change memory is an emerging non-volatile storage technology. Its better data retention, faster data read and write speed, and higher cycle times have become a strong competitor for the next generation of mainstream memory. The core of phase-change memory is phase-change material, which utilizes the transformation of phase-change material between amorphous and polycrystalline states to realize optical or electrical storage. According to different crystallization degrees of phase change materials, phase change memory can realize two-level and multi-level storage. Moreover, compared with the current mainstream charge storage devices on the market, phase change memory has better scale shrinkage characteristics, which is conduci...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00C23C14/06C23C14/35
Inventor 纪兴龙吴良才朱敏饶峰宋志棠曹良良孟云封松林
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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