Hafnium oxide-based ferroelectric capacitor and manufacturing method thereof

A technology of ferroelectric capacitors and hafnium oxide, which is applied in capacitors, circuits, electrical components, etc., can solve the problems of large leakage current of ferroelectric capacitors, degradation of film electrical properties, and waiting for development, and achieves the reduction of resistivity, deposition process and engraving. The effect of mature etching process and good miniaturization

Inactive Publication Date: 2019-06-25
XIANGTAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, HfO 2 When the film is crystallized and annealed, it is easy to react with TiN and TaN electrodes to form an interface layer and element diffusion, resulting in the degradation of the electrical properties of the film; when the HfO is further reduced 2 These effects are more pronounced when the thickness of the film
On the other hand, although Pt / FE-HfO 2 / Pt, Ir / FE-HfO 2 / Ir、Au / FE-HfO 2 / Au, W / FE-HfO 2 Ferroelectric capacitors such as / W also show good ferroelectric properties, but inert metals such as Pt, Ir and Au are difficult to etch, while W / FE-HfO 2 / W Ferroelectric capacitors have a large leakage current
[0005] Based on the above problems, the structure and preparation process of hafnium oxide-based ferroelectric capacitors with good process compatibility, excellent ferroelectric properties and high electrical reliability are still to be developed

Method used

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  • Hafnium oxide-based ferroelectric capacitor and manufacturing method thereof
  • Hafnium oxide-based ferroelectric capacitor and manufacturing method thereof
  • Hafnium oxide-based ferroelectric capacitor and manufacturing method thereof

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preparation example Construction

[0031] A preparation method of a hafnium oxide-based ferroelectric capacitor proposed by an embodiment of the present invention, such as figure 2shown, including the following steps:

[0032] S0, preparing the substrate 9;

[0033] Among them, the substrate 9 is prepared on p-type lightly doped silicon with CMOS addressing, selection and logic control circuits 1, interlayer dielectric 2 is deposited and the planarization process is completed. It can be done in two ways, one is based on the front-end process, that is, the ferroelectric capacitor is embedded before the back-end multi-layer metal wiring process, and after the CMOS addressing, selection and logic control circuits are prepared, the deposition of the first layer of interlayer dielectric is completed And the planarization process, the other is based on the back-end process, that is, the ferroelectric capacitor is embedded in the back-end multi-layer metal wiring process, after the CMOS addressing, selection and log...

Embodiment 1

[0046] A method for preparing a hafnium oxide-based ferroelectric capacitor provided by an embodiment of the present invention includes the following steps:

[0047] 1) Based on the front-end process, that is, before the ferroelectric capacitor is embedded in the back-end multi-layer metal wiring process, after preparing CMOS addressing, selection and logic control circuits, prepare CMOS addressing, selection and logic control circuits on p-type lightly doped silicon 1. Deposit the interlayer dielectric 2 and complete the planarization process.

[0048] 2) 10nmTi and 50nmTiN are successively deposited on the substrate 9 by magnetron sputtering method as the diffusion barrier layer 3a or bonding layer 3b (such as figure 1 shown);

[0049] 3) Deposit the first layer of bottom electrode 4 made of W material on the diffusion barrier layer 3a or the bonding layer 3b by magnetron sputtering method, with a thickness of 50nm, wherein the first layer of bottom electrode 4 is used as a...

Embodiment 2

[0056] A method for preparing a hafnium oxide-based ferroelectric capacitor provided by an embodiment of the present invention includes the following steps:

[0057] 1) Based on the back-end process, that is, after the ferroelectric capacitor is embedded in the back-end multi-layer metal wiring process, after the CMOS addressing, selection and logic control circuits and multi-layer metal wiring process are completed, CMOS is prepared on p-type lightly doped silicon Addressing, selection and logic control circuit 1, deposition of interlayer dielectric 2 and completion of planarization process.

[0058] 2) 10nmTa and 80nmTaN are successively deposited on the substrate 9 by magnetron sputtering as the diffusion barrier layer 3a or bonding layer 3b (such as figure 1 shown);

[0059] 3) Deposit the first layer of bottom electrode 4 made of Cu material on the diffusion barrier layer 3a or the bonding layer 3b by magnetron sputtering method, with a thickness of 100nm, wherein the fi...

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Abstract

The invention discloses a hafnium oxide-based ferroelectric capacitor and a manufacturing method thereof. The ferroelectric capacitor comprises a first bottom electrode layer (4), a second bottom electrode layer (5), and a hafnium oxide-based ferroelectric film layer (6b), a first top electrode layer (7) and a second top electrode layer (8) which are stacked sequentially from bottom to top, wherein the first bottom electrode layer (4) and the second top electrode layer (8) are conductive layers; and the second bottom electrode layer (5) and the first top electrode layer (7) are electrodes. Theferroelectric capacitor has good miniature and excellent ferroelectric properties.

Description

technical field [0001] The invention belongs to the field of integrated circuit technology and relates to an integration technology of ferroelectric memory, in particular to a hafnium oxide-based ferroelectric capacitor and a preparation method thereof. Background technique [0002] Ferroelectric memory (FRAM) is a very promising class of next-generation memory technology, and has been the focus of people's attention. FRAM has the characteristics of non-volatility, low power consumption, resistance to erasure and write fatigue, fast read and write speed, and strong radiation resistance. It has been widely used in RFID, instrumentation, PLC control, and medical equipment. It integrates ferroelectric capacitors (including bottom electrodes, ferroelectric thin film materials and top electrodes) into complementary metal oxide semiconductor (CMOS) addressing, selection and logic control circuits, using the bistable polarization characteristics of ferroelectric thin film materials...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/11507H01L49/02
CPCH01L28/40H01L28/75H10B53/30
Inventor 廖敏曾斌建周益春廖佳佳彭强祥
Owner XIANGTAN UNIV
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