A light-emitting diode chip and its manufacturing method

Abstract

The invention discloses a light-emitting diode chip and a manufacturing method thereof, and belongs to the technical field of semiconductors. The chip includes a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a transparent conductive layer, a P-type electrode, an N-type electrode, and a passivation protective layer; the passivation protective layer includes a first sub layer and a second sub layer which are sequentially stacked; the first sub layer is made of silicon oxynitride, the content of the oxygen component in the first sub layer gradually increases in the stacking direction of the passivation protective layer, and the content of the nitrogen component in the first sub layer gradually decreases in the stacking direction of the passivation protective layer; and the second sub layer is made of silicon dioxide. The invention can effectively avoid the sharp change of the refractive index when the light emitted from the active layer is directly incident from a transparent conductive layer to a silicon dioxide layer, can reduce the number of photons reflected in the light emitted by the active layer, can reduce the number of photons lost in a transmission path, and can improve the light-emitting efficiency of the light-emitting diode chip.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light emitting diode chip and a manufacturing method thereof. Background technique [0002] A light-emitting diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor electronic component that can emit light. As a high-efficiency, environmentally friendly and green new-generation solid-state lighting source, LED has the advantages of low voltage, low power consumption, small size, light weight, long life, and high reliability. Since the gallium nitride (GaN)-based LED was successfully developed by Japanese scientists in the 1990s, the process technology of LED has continued to improve, and the luminous brightness has continued to increase. It is being rapidly and widely used in traffic lights, automotive interior and exterior lights, urban landscape lighting, Mobile phone backlight, outdoor full-color display and other fields. [0003] The existing ...

AI Technical Summary

Problems solved by technology

The refractive index of silicon dioxide is 1.44, and the refractive index of indium tin oxide is 2.05. When the light emitted by the active layer enters the passivation protective layer from the transparent conductive layer, the refractive index changes greatly, and the reflectivity is relatively large. Many photons will be reflected in the light emitted by the layer, and most of the reflected photons will be lost in the transmission path, resulting in low light extraction efficiency of the LED chip, and at the same time, photons will be lost in the transmission path. Heat, the heat generated causes the temperature of the light-emitting diode chip to rise, which affects the service life of the light-emitting diode chip

Images