ESD protection circuit, ESD protection structure and forming method thereof

Abstract

The invention provides an ESD protection circuit, an ESD protection structure and a formation method thereof. The circuit comprises a function device, a first semiconductor transistor, a second semiconductor transistor and a third semiconductor transistor, wherein the function device includes a device output end, a device input end and a connection end; the first semiconductor transistor includesa first input end and a first output end; the first input end is connected to the device output end, and the first output end is connected to the device input end; and when the potential of the firstoutput end is higher than the potential of the first input end, and the potential difference between the first output end and the first input end is greater than the threshold conduction voltage of the first semiconductor transistor, the first semiconductor transistor is conducted. The ESD protection circuit comprises the first semiconductor transistor. When an electric charge quantity on a firstbonding pad is large, electric charges on the first bonding pad can be released through the first semiconductor transistor so that the pathway of charge releasing can be increased and the performanceof the ESD protection circuit is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an ESD protection circuit, an ESD protection structure and a forming method thereof. Background technique [0002] Static electricity is an objectively existing natural phenomenon, which can be produced in many ways, such as contact, friction, induction between electrical appliances, etc. Static electricity has the characteristics of long-term accumulation, high voltage, low power, low current and short action time. [0003] For electronic products, electrostatic discharge (Electrostatic discharge, ESD) is a major factor affecting the reliability of integrated circuits. ESD is a rapid neutralization process of electric charge. Due to the high electrostatic voltage, it will bring destructive consequences to the integrated circuit, resulting in the failure of the integrated circuit. Therefore, in order to protect the integrated circuit from being damaged by E...

AI Technical Summary

Problems solved by technology

[0004] However, the protection performance of the ESD protection circuit formed by the prior art is relatively poor

Images