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High-performance piezoelectric sensor element and preparation process thereof

A piezoelectric sensor and preparation technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., to achieve energy saving and good heat resistance , strong electrical effect

Active Publication Date: 2018-10-23
张发华
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is that traditional barium titanate piezoelectric elements and bismuth layered piezoelectric elements cannot have good heat resistance and strong electrical properties at the same time, and the purpose is to provide a high-performance piezoelectric sensor element to solve the traditional The problem that barium titanate piezoelectric elements and bismuth layered piezoelectric elements cannot have good heat resistance and strong electrical properties at the same time

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A kind of high-performance piezoelectric sensor element of the present invention, comprises the component of following weight fraction: 40%-50% Bi 2 o 3 , 25%-35% TiO 2 , 6%-10% BaCO 3 , 6%-9% Na 2 CO 3 , 4%-6.5% SrCO 3 .

[0029] The present invention combines the bismuth layered piezoelectric element and the barium titanate piezoelectric element to prepare a piezoelectric element with high dielectric constant and high Curie temperature; the Curie temperature of the existing bismuth layered piezoelectric element is as high as 500°C -700℃, but the piezoelectric coefficient d33 is usually 4-9pC / N; BaCO 3 with TiO 2 The barium titanate-based piezoelectric material is prepared. Titanium dioxide and barium carbonate are used as the initial raw materials. The barium titanate base with a tetragonal crystal structure is conducive to the formation of ceramic grains with a tetragonal crystal structure, which promotes the improvement of piezoelectric activity. The effect ...

Embodiment 2

[0032] Based on embodiment 1, a kind of high-performance piezoelectric sensor element of the present invention comprises the component of following weight fraction: 40% Bi 2 o 3 , 25% TiO 2 , 6% BaCO 3 , 6% Na 2 CO 3 , 4% SrCO 3 . The piezoelectric element prepared in this embodiment has a piezoelectric coefficient d33 of 150.2 pC / N and a Curie temperature of 302°C.

Embodiment 3

[0034] Based on embodiment 1, a kind of high-performance piezoelectric sensor element of the present invention comprises the component of following weight fraction: 50% Bi 2 o 3 , 35% TiO 2 , 10% BaCO 3 , 9% Na 2 CO 3 , 6.5% SrCO 3 . The piezoelectric element prepared in this embodiment has a piezoelectric coefficient d33 of 150.5 pC / N and a Curie temperature of 304°C.

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Abstract

The invention discloses a high-performance piezoelectric sensor element comprising the following components, by weight: 40% to 50% of Bi2O3, 25% to 35% of TiO2, 6% to 10% of BaCO3, 6% to 9% of Na2CO3,and 4% to 6.5% of SrCO3. A multi-layer structure with the piezoelectric coefficient d33 of 150-190 pC / N and the Curie temperature of 300 to 450 DEG C is obtained. A problem that the traditional barium-titanate piezoelectric element and tantalum-layered piezoelectric element can not have excellent heat-resistant and electrical performances simultaneously is solved.

Description

technical field [0001] The invention relates to an inductance element and a preparation process, in particular to a high-performance piezoelectric sensor element and a preparation process. Background technique [0002] Piezoelectric sensors are sensors made using the piezoelectric effect produced by certain dielectrics under force. The so-called piezoelectric effect refers to the phenomenon that when some dielectrics are deformed (including bending and stretching deformation) by an external force in a certain direction, charges will be generated on the surface due to the polarization of internal charges. The piezoelectric element is an important part of the piezoelectric sensor. The piezoelectric constant and the Curie temperature are important parameters for judging the quality of the piezoelectric element; not at any temperature, the magnetic material is magnetic, and the magnetic material has a critical temperature Tc. That is, the Curie temperature. Above this temperatu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/187H01L41/43C04B35/475C04B35/622H10N30/853H10N30/097
CPCC04B35/475C04B35/622C04B2235/3201C04B2235/3215C04B2235/3213C04B2235/656H10N30/8536H10N30/8561H10N30/097
Inventor 张发华
Owner 张发华
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