Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Transparent conductive film, method for manufacturing transparent conductive film, metal mold, and method for manufacturing metal mold

A technology of transparent conductive film and metal mold, which is applied to equipment for manufacturing conductive/semiconductive layers, manufacturing of cables/conductors, conductive layers on insulating carriers, etc., and can solve problems such as supply anxiety

Inactive Publication Date: 2018-10-23
JXTJ NIPPON OIL & ENERGY CORP
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, indium, which is a raw material of ITO, is a rare metal, so there is concern about future supply

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Transparent conductive film, method for manufacturing transparent conductive film, metal mold, and method for manufacturing metal mold
  • Transparent conductive film, method for manufacturing transparent conductive film, metal mold, and method for manufacturing metal mold
  • Transparent conductive film, method for manufacturing transparent conductive film, metal mold, and method for manufacturing metal mold

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0165] Polyphenylene was mixed in a solvent of DMF (N',N'-dimethylformamide) (manufactured by Wako Pure Chemical Industries) and THF (tetrahydrofuran) (manufactured by Tokyo Chemical Industry) at a volume ratio of 1:1. Ethylene (weight average molecular weight: 23 million) (manufactured by Polysciences) was dissolved to prepare a polystyrene solution having a concentration of 0.1 wt%. Using this polystyrene solution as a raw material (spinning liquid), on a Si wafer with a thermally oxidized film with a thickness of 50 nm, use an electrospinning device (manufactured by Fuence Co., Ltd., ES-2000S2) with a distance of 15 cm between electrodes. , a potential difference of 15 kV, and a liquid delivery rate of 30 μL / min, the polystyrene nanofibers were deposited (spread) for 10 seconds. The average fiber diameter of the obtained fibers was 1000 nm. Next, the Si wafer with the nanofiber thermal oxide film deposited thereon was heat-treated at 130° C. for 30 minutes to prepare a Si ...

Embodiment 2

[0173] A polystyrene solution with a concentration of 0.05 wt% was used as the spinning solution, the spreading time of the nanofibers was set to 16 seconds, and the etching time of the Si wafer was set to 16 seconds. Make the Si basic mold by way. The average fiber diameter of the nanofibers was 500 nm, and the area ratio (coverage ratio) of the nanofibers adhering to the thermal oxide film-attached Si wafer was 6.8%. Also, the protrusions of the concavo-convex pattern of the Si base mold had a linear shape with a width and a height of 500 nm, and formed a random network structure in plan view.

[0174] Using the obtained Si base mold having a random network structure, a transparent conductive film was produced under the same conditions as in Example 1. A cross-sectional SEM photograph of the produced transparent conductive film is shown in Figure 11B . The height of the conductive portion was 300 nm, the width was 500 nm, and the ratio thereof was 0.6. The sheet resista...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

A transparent conductive film 10, 20 is provided with: a transparent film 11, 21; and a linear conductive part 13, 23 extending on the transparent film 11, 21. The conductive part 13, 23 constitutes arandom network structure, the width of the conductive part 13, 23 is within a range of 200 to 3000 nm, and the height of the conductive part 13, 23 is larger by 0.5 times than the width W of the conductive part 13, 23. In the transparent conductive film 10, 20, pattern visibility and moire are not generated, and the resistance of the film is low.

Description

technical field [0001] The present invention relates to a transparent conductive film, a method for producing the same, a metal mold for producing the transparent conductive film, and a method for producing the same. Background technique [0002] In thin TVs, mobile phones, smart phones, tablet and other display devices or touch panels, solar cells, electroluminescent components, electromagnetic shielding, functional glass, etc., transparent electrodes have become an essential element. As a conductive material used for transparent electrodes of these electronic devices, indium tin oxide (hereinafter abbreviated as ITO) is becoming mainstream. [0003] However, since indium which is a raw material of ITO is a rare metal, there is concern about future supply. In addition, since steps such as sputtering for producing an ITO film are low in productivity and cost reduction is difficult, an alternative material to ITO is required. [0004] As an alternative material for the ITO ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01B5/14B32B7/02H01B13/00
CPCH01B5/14H01B13/00B29C33/42B29C33/3842H01B13/0026B29C2033/385
Inventor 冈部隆志
Owner JXTJ NIPPON OIL & ENERGY CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com