Thermosetting vinyl organic silicon resin composition and application thereof in high-frequency circuit board

A technology of vinyl silicone and resin composition, which is applied in the direction of circuit substrate materials, printed circuits, printed circuit manufacturing, etc., and can solve the problem of not meeting the requirements of the adhesion of copper-clad laminates, the dielectric loss of the substrate is not low enough, and the substrate layer In order to achieve the effects of excellent thermal and oxidative aging resistance, low dielectric loss and low water absorption performance

Active Publication Date: 2018-11-02
GUANGDONG SHENGYI SCI TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Both of the above two patents use vinyl-modified polyphenylene ether resin as the main resin and vinyl silicone resin as the crosslinking agent. The dielectric loss of the prepared substrate is still not low enough to meet the market's increasing demand for high-frequency substrate dielectric loss. lower demand
[0009] For example, if vinyl silicone resin is used as the whole resin, although the prepared substrate has lower dielectric constant and dielectric loss, the adhesion between the substrate layers is poor, which cannot meet the requirements of the copper-clad laminate for the interlayer adhesion of the substrate. Require

Method used

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  • Thermosetting vinyl organic silicon resin composition and application thereof in high-frequency circuit board
  • Thermosetting vinyl organic silicon resin composition and application thereof in high-frequency circuit board
  • Thermosetting vinyl organic silicon resin composition and application thereof in high-frequency circuit board

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Experimental program
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Effect test

Embodiment 1

[0088] 80.0 parts by weight of three-dimensional random network structure MQ vinyl silicone resin DY-VMQ102, 20.0 parts by weight of vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of free radical initiator DCP, 233.0 parts by weight of silicon Micropowder 525, dissolved in toluene solvent, and adjusted to a suitable viscosity. Use 2116 glass fiber cloth to impregnate the resin glue solution, pass the nip shaft to control the suitable single weight, and dry it in an oven to remove the toluene solvent to obtain 2116 prepreg. Overlap 4 sheets of 2116 prepreg, with copper foil of 1OZ thickness on the upper and lower sides, vacuum lamination and curing in a press for 90min, and the curing pressure is 50kg / cm 2 , the curing temperature is 200°C, and a high-frequency circuit substrate is obtained. The comprehensive performance of the substrate is shown in Table 2.

Embodiment 2

[0090] 80.0 parts by weight of linear vinyl silicone resin DMS-V05, 20.0 parts by weight of vinyl modified polyphenylene ether resin SA9000, 3.0 parts by weight of free radical initiator DCP, 233.0 parts by weight of silicon micropowder 525, dissolved in toluene solvent and adjust to a suitable viscosity. Use 2116 glass fiber cloth to impregnate the resin glue solution, pass the nip shaft to control the suitable single weight, and dry it in an oven to remove the toluene solvent to obtain 2116 prepreg. Overlap 4 sheets of 2116 prepreg, with copper foil of 1OZ thickness on the upper and lower sides, vacuum lamination and curing in a press for 90min, and the curing pressure is 50kg / cm 2 , the curing temperature is 200°C, and a high-frequency circuit substrate is obtained. The comprehensive performance of the substrate is shown in Table 2.

Embodiment 3

[0092] The cyclic vinyl silicone resin WD-V4 of 80.0 parts by weight, the vinyl modified polyphenylene ether resin SA9000 of 20.0 parts by weight, the free radical initiator DCP of 3.0 parts by weight, the microsilica powder 525 of 233.0 parts by weight, are dissolved in toluene solvent and adjust to a suitable viscosity. Use 2116 glass fiber cloth to impregnate the resin glue solution, pass the nip shaft to control the suitable single weight, and dry it in an oven to remove the toluene solvent to obtain 2116 prepreg. Overlap 4 sheets of 2116 prepreg, with copper foil of 1OZ thickness on the upper and lower sides, vacuum lamination and curing in a press for 90min, and the curing pressure is 50kg / cm 2 , the curing temperature is 200°C, and a high-frequency circuit substrate is obtained. The comprehensive performance of the substrate is shown in Table 2.

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Abstract

The invention relates to a thermosetting vinyl organic silicon resin composition. The resin composition comprises: vinyl organic silicon resin which comprises any one or a combination of at least twoof linear vinyl organic silicon resin, circular vinyl organic silicon resin and three-dimensional random network structure MQ vinyl organic silicon resin; vinyl modified polyphenyl ether resin; a radical initiator; the invention further provides a high-frequency circuit substrate prepared by adopting the resin composition and application of the high-frequency circuit substrate. The high-frequencycircuit substrate provided by the invention is low in dielectric constant, low in dielectric loss and low in water absorption; the interlayer adhesion of the high-frequency circuit substrate can meetrequirements of the interlayer adhesion between copper-clad plates; the halogen-free and phosphorus-free V-0 level of flame retardance can be realized.

Description

technical field [0001] The invention relates to a composition of vinyl silicone resin, in particular to a thermosetting vinyl silicone resin composition and its application in high-frequency circuit substrates. Background technique [0002] In recent years, with the rapid development of wireless communication technology and electronic products, electronic circuits have entered the stage of high-speed information processing and high-frequency signal transmission. However, when the frequency is greater than 300MHz or even above GHz, the electrical properties of the substrate will be seriously affected. The characteristics of electronic circuits, thus putting forward higher requirements on the performance of the substrate. [0003] In terms of dielectric constant performance, in high-frequency circuits, the transmission rate of the signal is related to the dielectric constant D of the insulating material k The relationship is: insulating material dielectric constant D k The l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L83/07C08L71/12C08K3/36C08K7/14H05K1/03H05K3/02B32B17/02B32B17/06B32B15/20B32B27/04B32B27/30
CPCB32B5/02B32B15/14B32B15/20B32B2260/021B32B2260/046B32B2262/101C08L83/04C08L2201/02C08L2201/08C08L2201/22C08L2203/20C08L2312/00H05K1/0373H05K3/022C08L71/126C08K3/36C08K7/14B32B15/08B32B17/02B32B17/06B32B27/04B32B27/30C08L71/12H05K1/03H05K3/02
Inventor 陈广兵曾宪平
Owner GUANGDONG SHENGYI SCI TECH
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