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a process equipment

A technology of process equipment and process chamber, which is applied in the field of semiconductor preparation, can solve problems such as poor uniformity and yield drop, and achieve the effect of achieving uniformity, improving process stability and product yield

Active Publication Date: 2021-06-08
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the process is carried out at this time, due to the difference in gas velocity above the susceptor 5, the ions near the end of the cold pump during deposition will be taken away by the air flow with a higher flow velocity, so that the position closer to the cold pump 8 will have a thinner film due to fewer ions , the film is thicker at a position farther from the cold pump 8, resulting in different thicknesses of the deposited film, poor uniformity, and reduced yield

Method used

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Experimental program
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Effect test

Embodiment 1

[0033] This embodiment provides a process equipment, in which the uniformity of the deposited film is improved by isolating the shunt device, which reduces the influence of the cold pump bias pumping on the gas movement in the process chamber, and greatly improves the thickness of the film. Concentration and thickness uniformity, thereby enhancing the process performance of the equipment and improving the yield of the product.

[0034] The process equipment includes a process chamber, a base, a support mechanism, an air extraction port and an air extraction device. The support mechanism is arranged at the bottom of the process chamber and supports the base. The chambers are connected, wherein, an isolation splitter plate is arranged between the base and the gas extraction port, and the isolation splitter plate divides the process chamber into interconnected process areas and gas extraction areas, and the total area of ​​the connected positions is larger than the area of ​​the g...

Embodiment 2

[0046] This embodiment provides a process equipment, in which the uniformity of the deposited film is improved by isolating the splitter plate, the influence of the cold pump bias pumping on the gas movement in the process chamber is reduced, and the thickness and concentration of the film are greatly improved. Uniformity, thereby enhancing the process performance of the equipment and improving the yield of the product. The difference from the process equipment in Embodiment 1 is that the arrangement and diameter of the through holes in the isolation splitter plate in this embodiment are different.

[0047] In the process equipment of this embodiment, the communication position is an opening structure provided on the isolation splitter plate 10, and the total area of ​​the holes on the isolation splitter plate 10 is greater than or equal to the area of ​​the air suction port. Such as Figure 6 As shown, the apertures of the plurality of openings in the isolation splitter plat...

Embodiment 3

[0051] This embodiment provides a process equipment, in which the uniformity of the deposited film is improved by isolating the splitter plate, the influence of the cold pump bias pumping on the gas movement in the process chamber is reduced, and the thickness and concentration of the film are greatly improved. Uniformity, thereby enhancing the process performance of the equipment and improving the yield of the product. Different from the process equipment in Embodiment 1 and Embodiment 2, no through holes are provided on the isolation manifold in this embodiment.

[0052] Such as Figure 7 and Figure 8 As shown, the isolation manifold 10 is a plate-shaped non-porous structure, and the communication position is the gap formed between the isolation manifold 10 and the support mechanism 4 and the side wall of the process chamber 3 respectively (that is, between the support mechanism 4 and the isolation manifold 10). The gap 12 between the isolation distribution plate 10 and t...

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Abstract

The invention belongs to the technical field of semiconductor preparation, and in particular relates to a process equipment. The process equipment includes a process chamber, a base, a support mechanism, an air extraction port and an air extraction device, the support mechanism is arranged at the bottom of the process chamber and supports the base, and the air extraction port is located in the process chamber The bottom wall of the chamber communicates the pumping device with the process chamber, wherein an isolation splitter plate is arranged between the base and the pumping port, and the isolation splitter plate divides the process chamber into It is a process area and an air extraction area that are connected to each other, and the total area of ​​the connected positions is larger than the area of ​​the air extraction port. The process equipment can reduce the influence of cold pump bias pumping on the gas movement in the process chamber, realize the uniformity of the film thickness of the deposited film, and improve the process stability and product yield.

Description

technical field [0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to a process equipment. Background technique [0002] Physical Vapor Deposition (PVD) technology is widely used in the coating industry. Magnetron sputtering is generally carried out in a vacuum process chamber. There is a base in the process chamber to support the substrate placed on it. . Generally, a target made of the material to be deposited on the substrate is fixed on the top of the process chamber, and a magnet is installed on the back of the target to enhance the ability to trap electrons through a magnetic field. A gas such as argon gas is passed between the substrate and the target, and a negative voltage is applied to the target, so that the gas is ionized to generate plasma, and the argon ions hit the target to generate atoms or ions of the target material, and these particles are deposited on the substrate. Form a thin film. [0003] Su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/22C23C14/35
CPCC23C14/22C23C14/35
Inventor 赵康宁董博宇武学伟王桐王军郭冰亮李丽耿玉洁马怀超王庆轩徐宝岗刘绍辉张鹤南李赫楠
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD