A method and an apparatus for treating a surface of a tco material in a semiconductor device
A semiconductor and device technology, applied in the surface field of transparent conductive oxide materials, can solve problems such as structural problems, shedding, poor electrical performance of solar cells, etc., and achieve the effect of highly uniform pretreatment current
Pending Publication Date: 2018-11-09
NEWSOUTH INNOVATIONS PTY LTD
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- Description
- Claims
- Application Information
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Problems solved by technology
Patterned plated copper electrodes were found to have poor adhesion to the ITO layer as copper plated directly onto the ITO layer was found to flake off after plating or during removal of the mask
This poor adhesion leads to poor electrical performance of solar cells due to high series resistance
Structural problems can also occur if the copper electrodes come off the ITO
Method used
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Embodiment Construction
[0055] Embodiments of the present invention relate to methods and apparatus for treating TCO materials in semiconductor devices in order to improve the adhesion of certain metals to the TCO materials. Embodiments also relate to methods for plating metal to TCO materials treated for improved metal adhesion. Some embodiments are directed to photovoltaic devices comprising TCO layers, such as heterojunction solar cells, where the TCO layers have been treated to improve metal adhesion.
[0056] The TCO process is performed by utilizing the characteristics of a structure arranged to facilitate current flow in one direction in a semiconductor device.
[0057] Unlike other methods of treating TCO, which require direct mechanical contact with the TCO material, in the methods and devices disclosed here, the TCO surface being treated is only contacted by the electrolyte. Furthermore, there is no need for the generated current to flow laterally through the surface being treated. Instea...
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Abstract
The present disclosure provides a method for treating a surface portion of a TCO material in a semiconductor device that comprises a structure arranged to facilitate current flow in one direction. Toperform the method the surface portion of the TCO is exposed to an electrolyte and a current is induced in the device. The current allows reducing the TCO material in a manner such that the adhesion of a metallic material to the exposed surface portion is improved over the adhesion of the metallic material to a non-exposed surface portion.
Description
technical field [0001] The present invention relates generally to the field of semiconductor device fabrication, and in particular to methods and apparatus for treating the surface of transparent conductive oxide (TCO) materials in semiconductor devices. Background technique [0002] Semiconductor devices often have metallic elements that can be used to make electrical contact between the device and other external components. Metal elements can also be used to interconnect different parts of a semiconductor device. [0003] For example, solar cells have metal electrodes that allow the extraction of photogenerated charge carriers as electrical current from the device. These metal electrodes may consist of patterned metal structures, such as a grid of metal fingers interconnected by bus bars, or full planar metal layers. Patterned structures are typically used on one or more surfaces of a solar cell that are exposed to solar radiation. [0004] Electrochemical metal plating...
Claims
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IPC IPC(8): H01L21/28C01G1/02C01G15/00C01G19/02C30B33/00H01L21/329H01L21/44H01L31/0224H01L31/18
CPCC01G1/02C01G15/00C01G19/02H01L31/18H01L31/022475H01L31/022425H01L31/06H01L31/1884H01L31/1888C30B33/00H01L21/288H01L21/306H01L21/3242H01L31/022466Y02E10/50H01L31/02168H01L31/02366
Inventor A·J·列侬V·A·艾伦
Owner NEWSOUTH INNOVATIONS PTY LTD