Quaternary co-evaporated AIGS thin film and preparation method and application thereof
A film and film layer technology, applied in the field of quaternary co-evaporation AIGS film and its preparation, can solve the problems of complicated operation and high equipment cost, and achieve the effect of high accuracy and high phase rate
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[0036] A kind of preparation method of quaternary co-evaporating AIGS thin film, comprising
[0037] The step of preparing the Mo back electrode: Deposit metal Mo on the glass substrate by DC magnetron sputtering method to obtain the substrate with Mo back electrode; in this step, the DC magnetron sputtering method can effectively ensure the conductivity of the Mo film and adhesion and its microscopic morphology;
[0038] The setting steps of the evaporation chamber: place the substrate with the Mo back electrode on the rotary sample stage of the evaporation chamber of the Molecular beam epitaxy equipment, with the side with the Mo back electrode facing down, a heating source is placed above the substrate, and the raw material evaporation source is located on the evaporation chamber. At the bottom of the chamber, a switch for controlling the raw material is installed at the outlet of the raw material evaporation source. The evaporation chamber is cooled with liquid nitrogen an...
Embodiment 1
[0064] A quaternary co-evaporated AIGS thin film, comprising a glass substrate, a metal Mo back electrode deposited on the glass substrate and an absorption layer co-evaporated on the Mo back electrode; the absorption layer is a one-step quaternary co-evaporation of Ag, In, The AIGS film layer that Ga, Se forms; The total thickness of described absorption layer is 1.5 μm; The glass substrate is soda lime glass, and the thickness of glass substrate is 2.5mm; The thickness of described Mo back electrode is 0.8 μm;
[0065] The preparation method of this quaternary co-evaporation AIGS thin film comprises
[0066] The step of preparing the Mo back electrode: Deposit metal Mo on the glass substrate by DC magnetron sputtering method to obtain the substrate with Mo back electrode; in this step, the DC magnetron sputtering method can effectively ensure the conductivity of the Mo film and adhesion and its microscopic morphology;
[0067] The setting steps of the evaporation chamber: p...
Embodiment 2
[0071] A quaternary co-evaporated AIGS thin film, comprising a glass substrate, a metal Mo back electrode deposited on the glass substrate and an absorption layer co-evaporated on the Mo back electrode; the absorption layer is a one-step quaternary co-evaporation of Ag, In, The AIGS film layer that Ga, Se forms; The total thickness of described absorption layer is 1.8 μm; The glass substrate is soda lime glass, and the thickness of glass substrate is 2.0; The thickness of described Mo back electrode is 1.0 μm;
[0072] The preparation method of this quaternary co-evaporation AIGS thin film comprises
[0073] The step of preparing the Mo back electrode: Deposit metal Mo on the glass substrate by DC magnetron sputtering method to obtain the substrate with Mo back electrode; in this step, the DC magnetron sputtering method can effectively ensure the conductivity of the Mo film and adhesion and its microscopic morphology;
[0074] The setting steps of the evaporation chamber: pla...
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