High Electron Mobility Transistors with Coupled Field Plates

Abstract

The present invention proposes a high electron mobility transistor with a coupling field plate, comprising: a substrate; a buffer layer is arranged above the substrate; a channel layer is arranged above the buffer layer; a source electrode, a drain electrode are arranged above the channel layer Pole and barrier layer, and source electrode and drain electrode are positioned at the two ends of barrier layer, and barrier layer is positioned at the middle of source electrode and drain electrode; Dielectric layer and gate electrode are arranged above barrier layer; It is characterized in that, Several coupling field plates are arranged on the surface of the dielectric layer between the gate electrode and the drain electrode, and a coupling electrode is arranged above each coupling field plate, and all the coupling electrodes are connected to the source electrode through metal interconnection lines. The structure can change the coupling potential of the coupling field plate through the size design of the coupling electrode and the coupling field plate, and then change the adjustment effect of the coupling field plate on the lateral electric field, optimize the lateral electric field distribution of the device, and improve the lateral withstand voltage capability of the device.

Description

technical field [0001] The present invention relates to the field of power semiconductor devices, and more specifically relates to a high electron mobility transistor with coupled field plates suitable for high voltage applications. Background technique [0002] High Electron Mobility Transistors (HEMTs) with heterostructures, especially those made of GaN and AlGaN, feature high electron mobility and a large critical electric field, resulting in a high breakdown voltage , The advantages of small on-resistance and fast switching speed can improve the efficiency of the power management system and reduce the volume of the power management system, and have broad application prospects in the field of power semiconductors. [0003] Due to the technical difficulty and high cost of forming P-type doped regions in heterostructure high electron mobility transistors, super junction technology and buried layer technology in the field of power semiconductors cannot be applied to HEMT dev...

AI Technical Summary

Problems solved by technology

High electron mobility transistor structures using conventional source field plate technology such as figure 1 As shown, since the traditional source field plate is formed by the source electrode, its potential is a fixed source potential, resulting in a large lateral electric field peak at the end of the source field plate, and in the barrier layer between the gate electrode and the drain electrode The distribution of the lateral electric field is very uneven, so that the lateral withstand voltage capability of the device is low, and the breakdown voltage of the device is much lower than the theoretical value

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