A light-emitting diode epitaxial wafer and its manufacturing method

Abstract

The invention discloses a light-emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the technical field of semiconductors. An active layer of the light-emitting diode epitaxial wafer comprises a plurality of well layers and barrier layers which are periodically and alternatively grown, wherein each well layer is a superlattice structure comprising a first sub-layer and a second sub-layer, the first sub-layer and the second sub-layer both are InGaN layers, the In concentration in the first sub-layer is larger than the In concentration in the second sub-layer, and In of each well layer is gradually doped to GaN lattices. Compared with the prior art which the In of the InGaN well layers is doped into the GaN lattices in one time, the impact of the In doping to anenergy band can be reduced, so that the distortion degree of the energy band is reduced, the overlap region of an electron wave function and a hole wave function is expanded, the electron and hole radiation combination light-emitting efficiency is improved, and the light-emitting efficiency of a light-emitting diode is further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a light-emitting diode epitaxial wafer and a manufacturing method thereof. Background technique [0002] LED (Light Emitting Diode, Light Emitting Diode) is a semiconductor electronic component that can emit light. As an efficient, environmentally friendly and green new solid-state lighting source, it is being rapidly and widely used, such as traffic lights, car interior and exterior lights, urban landscape lighting, mobile phone backlights, etc. [0003] The epitaxial wafer is the main component of the LED. The existing LED epitaxial wafer includes a substrate and a low-temperature buffer layer, a high-temperature buffer layer, an N-type layer, an active layer, an electron blocking layer, and a P-type layer stacked on the substrate in sequence. . Wherein, the active layer includes InGaN well layers and barrier layers alternately grown in multiple periods, and the concen...

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Problems solved by technology

[0005] Since the concentration of In in the InGaN well layer remains unchanged, the growth temperature also remains unchanged, which means that In is doped into the GaN lattice at one time, and the energy band of the GaN lattice will be greatly affected during the process of absorbing In. The impact is thus tilted, resulting in energy band distortion, which will cause the dislocation of the corresponding positions of electrons and holes in the InGaN well layer, resulting in fewer overlapping areas between electron wave functions and hole wave functions, reducing the electron and hole wave function. The radiative recombination luminous efficiency of the hole, thereby reducing the luminous efficiency of the light-emitting diode

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