The present disclosure discloses a method for preparing a light-emitting
diode epitaxial
wafer and an epitaxial
wafer with improved internal
quantum efficiency, and belongs to the field of light-emitting
diode production. During the first stage of the growth of the InGaN well layer, the
indium source flow rate is linearly increased to the first
indium source threshold, and the
gallium source is linearly reduced from the first
gallium source threshold to the second
gallium source threshold, so that an In source enriched region can be formed within the thickness of the thin InGaN well layer in a short time, thereby improving the light extraction efficiency of the multi-
quantum well layer. The second stage of growth plays a role in transition and improving the
crystal quality. In the third stage, the
indium source remains unchanged while the gallium source increases linearly, and in the fourth stage, both the indium source and the flow rate are increased to improve the luminous efficiency. In the fifth and sixth stages, the enrichment of In is further reduced, thereby improving the overall quality. The changes in the enrichment degree of In in the six stages relieve the polarization
electric field, increase the overlapping area of the
electron-hole
wave function, and improve the internal
quantum efficiency of the light-emitting
diode.