InGaN quantum dot LED epitaxial structure with strain reduction structure

An epitaxial structure, quantum dot technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of immature 3D LED chip preparation process, high preparation cost, complex preparation process, etc., to weaken the quantum confinement Stark effect, Improve the internal quantum efficiency and reduce the effect of polarization electric field

Inactive Publication Date: 2018-11-23
TAIYUAN UNIV OF TECH
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Problems solved by technology

LEDs prepared with GaN-based nanorods as epitaxial materials are called 3D LEDs. The preparation process of GaN-based nanorods is relatively c...

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  • InGaN quantum dot LED epitaxial structure with strain reduction structure
  • InGaN quantum dot LED epitaxial structure with strain reduction structure
  • InGaN quantum dot LED epitaxial structure with strain reduction structure

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[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, rather than All the embodiments; based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative work all belong to the protection scope of the present invention.

[0023] Such as figure 1 As shown, the present invention provides an InGaN quantum dot LED epitaxial structure with a strain-reducing structure, which includes a bottom-up arrangement of a sapphire substrate layer, a GaN low-temperature nucleation layer, a U-GaN layer, and an N-GaN layer , a first InGaN strain reduction layer, an InGaN quantum dot active region, an electron blocking layer and a P-GaN layer, the first...

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Abstract

The invention provides an InGaN quantum dot LED epitaxial structure with a strain reduction structure, which comprises a sapphire substrate layer, a GaN low-temperature nucleation layer, a U-GaN layer, an N-GaN layer, a first InGaN strain reduction layer, an InGaN quantum dot active region, an electron blocking layer and a P-GaN layer, wherein the first InGaN strain reduction layer is an InGaN monolayer or InGaN/GaN superlattice whose In component is lower than 10%. The InGaNInGaN strain reduction layer is introduced in the InGaN quantum dot LED epitaxial structure. The InGaN quantum dot LED epitaxial structure with the strain reduction structure in the invention brings about the following effects: (1) weakening the quantum-confined stark effect; (2) reducing the defect density of the InGaN quantum dot active region; (3) making up for the shortcomings of insufficient quantum dot density.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic materials, in particular to an InGaN quantum dot LED epitaxial structure with a strain reduction structure. Background technique [0002] GaN-based LEDs are known as the fourth-generation lighting sources. They have the advantages of low energy consumption, long life, small size, and high brightness. They have gradually replaced traditional incandescent and fluorescent lamps and become the mainstream light source in the lighting market. [0003] The existing GaN-based LEDs on the market are all quantum well LEDs, represented by blue-green LEDs, whose light-emitting layer is generally an InGaN / GaN multi-quantum well active region. Although it has achieved great success, there are essential shortcomings in InGaN / GaN multiple quantum wells, which cannot be completely overcome by technical means. First, due to the lattice mismatch between InGaN and GaN, and the high density of threading di...

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Application Information

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IPC IPC(8): H01L33/12H01L33/06H01L33/32
CPCH01L33/12H01L33/06H01L33/32
Inventor 贾志刚柳建杰董海亮梁建马淑芳许并社
Owner TAIYUAN UNIV OF TECH
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