A kind of self-cleaning glass and production process
A production process and self-cleaning technology, applied in the direction of coating, etc., can solve the problems of low adhesion and repeatability between the film and the glass substrate, poor self-cleaning effect, and low hydrophilicity of the glass surface, so as to improve self-cleaning Cleaning performance, improvement of binding force and deposition efficiency, effect of improving self-cleaning effect
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Embodiment 1
[0023] A production process for self-cleaning glass, comprising the steps of:
[0024] S1. Surface pretreatment of the glass;
[0025] S2. Place the pretreated glass obtained in step S1 in an annealing furnace for one annealing. The specific operation of one annealing is: heat up to 600°C at a rate of 10°C / min, then cool down to 180°C at a rate of 5°C / min. Get an annealed glass;
[0026] S3. Quickly transfer the primary annealed glass obtained in step S2 to a chemical vapor deposition furnace, and feed TiCl carried by the carrier gas 4 , and then pass through oxygen to carry out the deposition reaction at a temperature of 250°C to obtain deposited glass;
[0027] S4. Perform secondary annealing on the deposited glass obtained in step S3, and air-cool to obtain self-cleaning glass; the specific operation of the secondary annealing is as follows: heat up at 450°C at a rate of 8°C / min, and then cool down to 80°C at a rate of 3°C / min. ℃ insulation.
Embodiment 2
[0029] A production process for self-cleaning glass, comprising the steps of:
[0030] S1. Surface pretreatment of the glass;
[0031] S2. Place the pretreated glass obtained in step S1 in an annealing furnace for one annealing. The specific operation of one annealing is: raise the temperature to 700°C at a rate of 15°C / min and keep it for 20 minutes, then cool it down to 220°C at a rate of 8°C / min and keep it warm 40min to obtain an annealed glass;
[0032] S3. Quickly transfer the primary annealed glass obtained in step S2 to a chemical vapor deposition furnace, and feed TiCl carried by the carrier gas 4 , and then injecting oxygen at a temperature of 300° C. for 1 min to carry out a deposition reaction to obtain a deposited glass; wherein, the flow rate of the carrier gas is 300 sccm, and the flow rate of oxygen is 10 sccm.
[0033] S4. Perform secondary annealing on the deposited glass obtained in step S3, and air-cool to obtain self-cleaning glass; the specific operatio...
Embodiment 3
[0035] A production process for self-cleaning glass, comprising the steps of:
[0036] S1. Surface pretreatment of the glass;
[0037] S2. Place the pretreated glass obtained in step S1 in an annealing furnace for one annealing. The specific operation of one annealing is: heat up to 600°C at a rate of 13°C / min and keep it for 30 minutes, then cool it down to 180°C at a rate of 6°C / min and keep it warm 60min to obtain an annealed glass;
[0038] S3. Quickly transfer the primary annealed glass obtained in step S2 to a chemical vapor deposition furnace, and feed TiCl carried by the carrier gas 4 , and then injecting oxygen at a temperature of 250° C. for a deposition reaction for 2 minutes to obtain a deposited glass, wherein the flow rate of the carrier gas is 450 sccm, and the flow rate of oxygen is 50 sccm. ;
[0039] S4. Perform secondary annealing on the deposited glass obtained in step S3, and air-cool to obtain self-cleaning glass; the specific operation of the secondar...
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