Silicon carbide bipolar transistor and manufacturing method thereof
A technology of bipolar transistors and silicon carbide, which is applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of easy burning of the periphery, achieve uniform internal current, reduce edge current density, and improve reliability Effect
Active Publication Date: 2018-11-27
HANGZHOU UG MIN SEMICON TECH CO LTD
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The combination of high voltage at shutdown and high current density makes the periphery most likely to burn out
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[0042] The specific implementation manner of the present invention will be described in detail below in conjunction with the accompanying drawings and examples.
[0043] First of all, the shape of the N-type emission region of the present invention can be rectangle, square, hexagon, circle, trapezoid, triangle or other shapes, and any combination of shapes, usually a rectangle. For the sake of simplification, many descriptions in the specification use a rectangle for the N-type emitter region, a rectangle for the P-type base region, and a rectangle for the P-type base concentration region. This is an interdigitated structure of a common power transistor.
[0044] Secondly, the mask pattern mentioned in the present invention refers to the GDS pattern of the mask. This is the norm in the industry. To make the mask plate, first use computer-aided design to make the GDS data tape of the graphic generator, and draw the GDS graphics accordingly. There are two types of GDS graphic...
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Abstract
The invention provides a silicon carbide bipolar transistor and a manufacturing method thereof. The silicon carbide bipolar transistor is of an NPN three-layer SiC structure arranged on an upper surface of an N<+> type SiC substrate, wherein an upper layer is composed of a plurality of strips formed by a plurality of N type emission regions which are arrayed repeatedly; a middle layer is composedof a P type basic region, a P type concentrated basic region and a P type concentrated basic region bus bar; the P type basic region is arranged below the N type emission regions; a lower-layer N typecurrent collection region and an N<+> type SiC substrate are arranged below the P type basic region of the middle layer; upper surfaces of the N type emission regions are connected with an emission electrode metal layer; a lower surface of the N<+> type SiC substrate is connected with a current collection electrode metal layer; the P type concentrated basic region is crossed with or parallel to the P type concentrated basic region bus bar; a basic electrode metal layer is connected with the upper surface of the P type concentrated basic region bus bar. By adopting the silicon carbide bipolartransistor provided by the invention, the current density at the periphery can be reduced, and the anti-current impact capability of power devices is improved.
Description
technical field [0001] The invention belongs to the technical field of compound semiconductor current-mode power devices, and relates to a silicon carbide bipolar transistor (SiC BJT). Background technique [0002] Compound semiconductor material SiC has great advantages over single semiconductor material Si. In recent years, with the maturity of SiC single crystal rod material and epitaxy technology, silicon carbide bipolar transistor (SiC BJT) has been supplied to the market. figure 1 , figure 2 and image 3 It is a schematic structural diagram of a SiC BJT in the prior art. [0003] Compared with voltage-driven transistor SiC MOS transistor and SiC IGBT, SiC BJT has the advantages of low cost and easy fabrication, but there have always been some problems in reliability, which are related to the current edge effect of SiC BJT. Current collector effect is an inherent characteristic of SiC BJTs. According to the principle of the transistor, when it is turned on, due to ...
Claims
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IPC IPC(8): H01L29/73H01L29/06H01L21/331
CPCH01L29/0623H01L29/0684H01L29/66068H01L29/73
Inventor 李思敏
Owner HANGZHOU UG MIN SEMICON TECH CO LTD