Butterfly-shaped SnO2 two-dimensional nanometer material, and preparation method and application thereof

A two-dimensional nanomaterial and nanomaterial technology, applied in the field of butterfly-shaped SnO2 two-dimensional nanomaterials and its preparation, can solve the problems that hinder the application of two-dimensional nanomaterials, the surface activity of nanofilms, the sensitivity of surface adsorption gases, and the limited redox properties , The environment is not very good and other problems, to achieve the effect of rapid response and recovery characteristics, excellent selectivity, easy to scale

Active Publication Date: 2018-11-30
YUNNAN UNIV
View PDF1 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In hydrothermal synthesis, strong acids or strong bases, such as sodium hydroxide, potassium hydroxide and hydrochloric acid, are mostly the basic conditions of the method, and most of them need toxic and harmful organic solvents that are not very good for the environment; more important Interestingly, the two-dimensional SnO prepared by hydrothermal 2 The limited surface activity, surface adsorption, gas sensitivity, and redox characteristics of nanosheets and nanofilms hinder the development of SnO 2 Applications of 2D Nanomaterials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Butterfly-shaped SnO2 two-dimensional nanometer material, and preparation method and application thereof
  • Butterfly-shaped SnO2 two-dimensional nanometer material, and preparation method and application thereof
  • Butterfly-shaped SnO2 two-dimensional nanometer material, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] The present invention will be further described below in conjunction with the embodiments and the drawings, but the present invention is not restricted in any way. Any changes or substitutions made based on the teachings of the present invention belong to the protection scope of the present invention.

[0033] Butterfly-shaped SnO of the present invention 2 Two-dimensional nanomaterials are based on SnSO 4 And SDBS as raw materials prepared by hydrothermal reaction, the butterfly-shaped SnO 2 Two-dimensional nanomaterials have a two-dimensional butterfly shape and a rich surface defect structure, and have gas adsorption, surface activity, redox and gas sensitivity characteristics.

[0034] Butterfly-shaped SnO of the present invention 2 The preparation method of two-dimensional nanomaterials includes the steps of precursor solution preparation, main reaction, precursor separation, and nanomaterial preparation, including:

[0035] A. Precursor solution preparation:

[0036] 1) Pr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a butterfly-shaped SnO2 two-dimensional nanometer material, and a preparation method and an application thereof. The butterfly-shaped SnO2 two-dimensional nanometer material isprepared by using SnSO4 and SDBS as raw materials through a two-step combined method of a hydrothermal reaction and high-temperature oxidizing annealing. The butterfly-shaped SnO2 two-dimensional nanometer material has a two-dimensional butterfly shape and a structure rich in surface defects, and has the characteristics of gas adsorption, surface activity, oxidation reduction and gas sensitivity.The preparation method comprises the following steps: preparation of a precursor solution, a main reaction, separation of a precursor, and preparation of a nanometer material through high-temperatureoxidizing heat treatment. The application comprises the application of the butterfly-shaped SnO2 two-dimensional nanometer material in preparation of gas sensors. Directed at the problems of complicated preparation procedures, high cost, incapability of realizing large-scale preparation and addition of environmentally-unfriendly, toxic and harmful organic solvents like strong acid and strong alkali in conventional preparation of the two-dimensional SnO2 nanometer material, the invention provides a simple, economical, green and easily-scaled synthetic method.

Description

Technical field [0001] The invention belongs to the technical field of materials, and specifically relates to a butterfly-shaped SnO 2 Two-dimensional nano material and its preparation method and application. Background technique [0002] Since 2004, Novoselov K S and Geim A K successfully used adhesive tape to peel graphene flakes from highly oriented pyrolytic graphite, the preparation and application of various two-dimensional inorganic nanomaterials have entered a period of rapid development. Due to the reduction of material dimensions and structural feature size, two-dimensional nanomaterials such as nanosheets and nanofilms have significant surface effects and interface effects, small size effects, macroscopic quantum tunneling effects, and dielectric confinement effects, etc. It presents novel and unique physical, electronic, chemical and optical properties different from traditional materials, so it has broad application prospects in optoelectronic devices, sensors, micro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C01G19/02C01P2004/20C01P2004/61C01P2004/64
Inventor 赵鹤云万文静
Owner YUNNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products