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Quantum dot coated with metal oxide, preparation method thereof and application thereof

A technology of quantum dots and oxides, applied to quantum dots coated with metal oxides, in the field of preparation, can solve problems such as instability of morphology and crystal form, and achieve the effect of improving stability

Active Publication Date: 2018-11-30
NANJING TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The main purpose of the present invention is to provide a quantum dot coated with metal oxide, its preparation method and application, to solve the problem of unstable morphology and crystal form of the quantum dot coated with metal oxide in the prior art

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  • Quantum dot coated with metal oxide, preparation method thereof and application thereof
  • Quantum dot coated with metal oxide, preparation method thereof and application thereof
  • Quantum dot coated with metal oxide, preparation method thereof and application thereof

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preparation example Construction

[0031] In another exemplary embodiment of the present application, a method for preparing quantum dots coated with metal oxide is provided. The preparation method includes: step S1, dispersing zinc blende quantum dots in a first non-coordinating solvent In step S2, the quantum dot dispersion is mixed with the metal precursor to obtain the first reaction system; and step S3, the first reaction system is mixed with the alkyl alcohol-second non-coordinating solvent mixture Mix and carry out alcoholysis reaction to obtain quantum dots coated with metal oxides. The quantum dots coated with metal oxides have a zinc blende structure, and the metal precursor is selected from one of zinc carboxylate, magnesium carboxylate, and aluminum carboxylate. Kind or more.

[0032] In the above preparation method of this application, in the process of coating metal oxides by alcoholysis, the metal precursors are used as both precursors and ligands. The purpose of using a large amount of metal precur...

Embodiment 1

[0047] Take the 8nm green CdZnSeS alloy quantum dots (zinc blende quantum dots, fluorescence peak position 525nm, half-value width 26nm, and fluorescence quantum yield 78%) produced by Nanocrystal Technology Co., Ltd. as an example:

[0048] The purification method of green light CdZnSeS alloy quantum dots: Take 10mL stock solution in a 50mL centrifuge tube, add 40mL acetone, heat to about 50℃, and then centrifuge at a high speed of 8000rpm for 3 minutes. Remove and discard the supernatant. The precipitate was dissolved in a certain amount of toluene.

[0049] Weigh basic zinc carbonate (0.33g, 0.6mmol), oleic acid (2.2g, 7.5mmol), 10mL ODE in a 100mL three-necked flask, vent with inert gas for 10 minutes, raise the temperature to 280℃, and get a clear Solution (ie metal precursor). The clear solution was cooled to 150°C, a certain amount of purified solution of 8nm green light CdZnSeS alloy quantum dots dissolved in 5mL of toluene (solvent) (wherein, the UV absorption value was ...

Embodiment 2

[0052] Take the 8nm green CdZnSeS alloy quantum dots (zinc blende quantum dots, fluorescence peak position 525nm, half-value width 26nm, and fluorescence quantum yield 78%) produced by Nanocrystal Technology Co., Ltd. as an example:

[0053] The purification method of green light CdZnSeS alloy quantum dots: Take 10mL stock solution in a 50mL centrifuge tube, add 40mL acetone, heat to about 50℃, and then centrifuge at a high speed of 8000rpm for 3 minutes. Remove and discard the supernatant. The precipitate was dissolved in a certain amount of toluene.

[0054] Weigh magnesium acetate (0.642g, 3mmol), oleic acid (2.2g, 7.5mmol), 10mL ODE in a 100mL three-necked flask, exhaust with inert gas for 10 minutes, increase the temperature to 280 ℃, to obtain a clear solution (ie Metal precursor). The clear solution was cooled to 150°C, and a certain amount of the purified solution of 8nm green light CdZnSeS alloy quantum dots dissolved in 5mL of toluene (where the UV absorption value was ...

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Abstract

The invention provides a quantum dot coated with metal oxide, a preparation method thereof and application thereof. The quantum dot coated with the metal oxide comprises a sphalerite quantum dot and ametal oxide coating layer, wherein the metal oxide coating layer coats on the sphalerite quantum dot, the structure of the quantum dot coated with the metal oxide is a sphalerite structure, and metalelements in the metal oxide are selected from one or more of zinc, magnesium and aluminum. The quantum dot has a sphalerite structure; a metal oxide coating layer is arranged on the surface of the sphalerite quantum dot of the core layer, so that the morphology and the crystal form, under the protection of the coating layer, of the sphalerite quantum dot are prevented from being affected by the environment, and therefore, stability of optical properties of the quantum dot is improved.

Description

Technical field [0001] The invention relates to the field of quantum dot materials, in particular to a quantum dot coated with metal oxide, a preparation method and application thereof. Background technique [0002] In the past two decades, the synthesis chemistry of quantum dots has mainly focused on the monodisperse control of size and morphology and how to improve the fluorescence quantum yield. However, to make quantum dots as a kind of excellent light-emitting and optoelectronic materials, it is not enough to realize the monodispersion of size and morphology and increase the fluorescence quantum yield. It is more important to reduce the environment as much as possible, especially the influence of water and oxygen on the optical and electrical properties of quantum dots, which will greatly promote the academic and applied research of quantum dots. [0003] For single-size nuclear quantum dots, due to the large specific surface area of ​​the quantum dot and the dangling bonds o...

Claims

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Application Information

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IPC IPC(8): C09K11/88C09K11/02B82Y20/00B82Y30/00B82Y40/00
CPCC09K11/025C09K11/883B82Y20/00B82Y30/00B82Y40/00
Inventor 周健海
Owner NANJING TECH CORP LTD