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Large-surge one-way TVS device and manufacturing method thereof

A unidirectional, surge technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increasing the area of ​​TVS devices, reducing the clamping voltage effect, increasing the volume of finished products, etc., and achieving low cost , small size, and the effect of improving the surge capacity

Pending Publication Date: 2018-11-30
SHANGHAI CHANGYUAN WAYON MICROELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, traditional TVS protection devices, in order to increase the power, often increase the surge capacity by increasing the area of ​​the TVS device. Due to the increase in the area of ​​the device, the volume of the finished product after packaging will increase, so it cannot well meet various requirements. The demand for miniaturization of mobile terminals, on the other hand, the increase in the area of ​​TVS devices is not ideal for reducing the clamping voltage

Method used

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  • Large-surge one-way TVS device and manufacturing method thereof
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  • Large-surge one-way TVS device and manufacturing method thereof

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Embodiment 1

[0035] Step 1: First, select a P-type substrate silicon wafer, clean it with a chemical solvent (a mixed solvent of sulfuric acid and hydrogen peroxide), and then grow an oxide layer on the front and back of the silicon wafer at the same time.

[0036] Preferably, the resistivity of the P-type substrate is 0.5-5 Ω*cm, and the thickness is 150-250 μm, more preferably, the resistivity is 1-2 Ω*cm, and the thickness is 180-220 μm;

[0037] Preferably, the thickness of the grown oxide layer is 0.5-1.2 μm. This step completes the structure as figure 1 shown.

[0038] Step 2: Define the front N+ area by coating, exposing, and developing on the front side of the silicon wafer, and then define the N+ area on the back side by coating, exposing, and developing on the back of the silicon wafer, and then enter the acid tank to separate the front and back sides. The oxide layer in the open area is removed, and then the photoresist is removed.

[0039] Preferably, when removing the oxide...

Embodiment 2

[0049] Another preferred embodiment is obtained by adjusting the position of the N+ region on the back, such as Figure 7 .

Embodiment 3

[0051] Another preferred embodiment is obtained by adjusting the positions of the dielectric layer, the front N+ region and the back N+ region, such as Figure 8 .

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Abstract

The invention discloses a large-surge one-way TVS device. The large-surge one-way TVS device comprises a P-type substrate silicon wafer, a front face N+region and a back face N+region. An insulation dielectric layer is arranged on the front face of the P-type substrate silicon wafer, the front face N+region leads out positive cathode metal through a contact hole, the back face N+region and the P-type substrate silicon wafer lead out back face anode metal at the same time, so that the back face N+region and the P-type substrate silicon wafer can perform short circuit. According to the large-surge one-way TVS device, the N+region is additionally arranged on the back face of a substrate slice, a parasitic NPN transistor is formed, metal leading out is performed in a sum region, an emitter anda base of the parasitic NPN transistor perform short circuit, the TVS surge capability is greatly improved under the same area condition, the obtained TVS device has the advantages of high power, small size, high integration, low cost and the like.

Description

technical field [0001] The invention belongs to the field of semiconductor discrete devices, and relates to the design and manufacture of a protective device, in particular to a large surge unidirectional TVS device and a manufacturing method thereof. Background technique [0002] A transient voltage suppressor (Transient Voltage Suppressor, referred to as TVS) is a commonly used protection device, which has an extremely fast response speed and a considerable surge discharge capability. When its two ends are subjected to instantaneous high-energy impact, TVS can change the impedance value between the two ends from high impedance to low impedance at a very high speed, so as to discharge a momentary large current and clamp the voltage across its two ends. The bit is at a predetermined value, thereby protecting the subsequent circuit chip from the impact of transient high-voltage spikes and ensuring the safe operation of the circuit system and modules. Therefore, TVS is an indi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/06H01L29/417H01L29/861H01L21/285H01L21/329
CPCH01L29/0684H01L29/417H01L29/6609H01L29/8613H01L21/2855
Inventor 蒋骞苑王允苏海伟赵德益杜牧涵赵志方张彩霞徐亚静冯星星吴青青张利明
Owner SHANGHAI CHANGYUAN WAYON MICROELECTRONICS