Electret transistor force sensor and preparation method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- FUDAN UNIV
- Publication Date
- 2018-12-04
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the field of sensing technology, and in particular relates to an electret transistor force sensor and a preparation method thereof. Background technique
[0002] Electrets refer to materials that can store space charges or dipole charges for a long time. According to the type of charge carried by the electret, it can be divided into intrinsic electret and artificial electret. The local net charge of the former is the polarization charge formed by the orientation of the polar unit of the material itself in the electric field; while the charge of the latter is It is generated under the action of external field excitation or injected from the outside. In a broad sense, electrets include various intrinsic and artificial piezoelectric materials.
[0003] Electret has piezoelectric properties and can generate electrical signals under the action of external force, so it is widely used in the preparation of various force sensors. Ho...