Electret transistor force sensor and preparation method thereof

A technology of force sensor and electret, which is applied in the field of sensing, can solve the problems that the monitoring of static or quasi-static pressure and deformation is difficult to realize, and achieve the effect of high sensitivity and simple preparation method

Inactive Publication Date: 2018-12-04
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an electret transistor force sensor with both dynamic and static force monitoring functions and a preparation method thereof, so as to overcome the difficulty in monitoring static or quasi-static pressure and deformation of the electret itself in the prior art. implementation shortcomings,

Method used

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  • Electret transistor force sensor and preparation method thereof
  • Electret transistor force sensor and preparation method thereof
  • Electret transistor force sensor and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0021] This example illustrates the preparation method and force sensing performance of an electret transistor force sensor based on polypropylene porous electret film and pentacene organic semiconductor material.

[0022] Preparation of polypropylene porous electret film: Dissolve 1 gram of linear polypropylene particles in 15 grams of N,N-dimethylformamide organic solvent to form a uniform solution, and drop-coat the obtained polypropylene solution on a glass substrate and dried in a vacuum oven at 70°C for 8 hours to obtain a polypropylene film.

[0023] Foaming treatment of polypropylene porous electret film: place the above-mentioned polypropylene film in a high-pressure chamber, fill the pores in the polypropylene film with high-pressure gas, and then the high-pressure chamber is rapidly decompressed to ambient pressure, and the high-pressure gas in the film expands , generating bubbles with a pore size of tens of microns in the membrane.

[0024] Polarization treatment...

Embodiment 2

[0029] This example describes the preparation method of an electret transistor force sensor based on a polypropylene porous electret film and an organic semiconductor TIPS pentacene and its dynamic force sensing performance.

[0030] The preparation, foaming and polarization treatment process of the polypropylene porous electret film are consistent with those in Example 1.

[0031] Vacuum deposition of TIPS pentacene semiconductor layer: The TIPS pentacene organic semiconductor layer is deposited on the surface of polarized polypropylene porous electret film by vacuum thermal evaporation process. During the deposition process, the heating temperature of the quartz crucible was 252 °C, the thermal evaporation rate was 7 Å / s, and the final TIPS pentacene film was deposited with a thickness of 70 nm.

[0032] Preparation of source and drain electrodes: Copper source and drain electrodes are deposited on the TIPS pentacene film by vacuum thermal evaporation process to form a trans...

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Abstract

The invention belongs to the field of sensing technology, and to an electret transistor force sensor with a dynamic and static force monitoring function and a preparation method thereof. The electrettransistor force sensor is composed of an electret material and a semiconductor material. The electret deforms on the condition of an external force function, thereby causing a polarization state change, and furthermore causing change of source leakage current. Through detecting the source leakage current, monitoring to a static force and a dynamic force is realized. The electret transistor forcesensor and the preparation method thereof settle a problem of high difficulty in performing (quasi)static force monitoring on an electret capacitor. The electret transistor force sensor and the preparation method have advantages of simple preparation method, high sensitivity and high suitability for application in various fields with a force monitoring/detecting requirement.

Description

technical field [0001] The invention belongs to the field of sensing technology, and in particular relates to an electret transistor force sensor and a preparation method thereof. Background technique [0002] Electrets refer to materials that can store space charges or dipole charges for a long time. According to the type of charge carried by the electret, it can be divided into intrinsic electret and artificial electret. The local net charge of the former is the polarization charge formed by the orientation of the polar unit of the material itself in the electric field; while the charge of the latter is It is generated under the action of external field excitation or injected from the outside. In a broad sense, electrets include various intrinsic and artificial piezoelectric materials. [0003] Electret has piezoelectric properties and can generate electrical signals under the action of external force, so it is widely used in the preparation of various force sensors. Ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01L1/16B29C69/02C23C14/24C23C14/12C23C14/20
CPCB29C69/02C23C14/12C23C14/20C23C14/24G01L1/16
Inventor 朱国栋许凡王丛欢
Owner FUDAN UNIV
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