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A kind of submicron diamond composite sheet and its preparation process

The invention relates to a technology for a diamond composite sheet and a preparation process, which is applied in the field of submicron diamond composite sheet and its preparation, and can solve the problems of easy to grow diamond particles, poor quality of crystal grains, unevenness and the like.

Active Publication Date: 2021-08-20
ZHONGNAN DIAMOND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Submicron diamond compacts have excellent performance. However, due to the large surface area to volume ratio of very small diamond particles, when iron group elements such as Co, Ni, and Fe are used as binders, these metals are diamond solvents. The ultra-high pressure and high temperature sintering process includes the process of dissolving and precipitating diamonds in the solution. If diamonds smaller than 2 μm, especially smaller than 1 μm are used as raw materials, the diamond particles are easy to grow and the diamond particles in the diamond sintered body are not uniform.
The quality of the abnormally grown grains is very poor, which will cause changes in the internal structure of the polycrystalline diamond layer and weaken the bonding strength between diamond particles, resulting in deterioration of performance, so it cannot be used as a finishing and ultra-finishing tool blank.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] A preparation process of a submicron diamond composite sheet, comprising the following steps:

[0033] 1) Cobalt removal on the surface of the cemented carbide substrate: wrap the polytetrafluoroethylene protective material on the bottom and side of the cemented carbide substrate, and then place it on the HNO 3 :H 2 Etching in a solution with O volume ratio of 1:2.5 for 20 min, took out the cemented carbide substrate and rinsed it with ion water to neutrality to obtain a cemented carbide substrate with decobalt on the surface, the thickness of the decobaltized layer was 50 μm, and the cobalt content 1.0% (percentage by weight);

[0034] Among them, the material grade of the cemented carbide substrate is YG10, and the specification is φ45mm×3.0mm;

[0035] 2) Purification of diamond micropowder: mix diamond micropowder with 200 mesh sodium chloride at a mass ratio of 1:2, put it into a molybdenum box after mixing, place it in a vacuum sintering furnace, and evacuate un...

Embodiment 2

[0051] 1) Cobalt removal on the surface of the cemented carbide substrate: wrap the polytetrafluoroethylene protective material on the bottom and side of the cemented carbide substrate, and then place it on the HNO 3 :H 2 Etching in a solution with a volume ratio of O of 1:3 for 60 min, took out the cemented carbide substrate and rinsed it with ionized water until neutral to obtain a cemented carbide substrate with decobalt on the surface, the thickness of the decobalt layer was 100 μm, and the cobalt content of the 1.2% (weight percentage);

[0052] Among them, the material grade of the cemented carbide substrate is YG10, and the specification is φ45mm×3.0mm;

[0053] 2) Purification of diamond micropowder: mix diamond micropowder with 300 mesh sodium chloride at a mass ratio of 1:3, put it into a molybdenum box after mixing, place it in a vacuum sintering furnace, and evacuate until the pressure in the furnace is 3×10 -3 Below Pa, the temperature rises to 800°C for 2 hours...

Embodiment 3

[0069] 1) Cobalt removal on the surface of the cemented carbide substrate: wrap the polytetrafluoroethylene protective material on the bottom and side of the cemented carbide substrate, and then place it on the HNO 3 :H 2O volume ratio is 40min in the solution of 1:2.75, takes out cemented carbide substrate and washes to neutrality with ion water, obtains the cemented carbide substrate of surface decobaltization, and the thickness of decobalt layer is 75 μ m, and the cobalt content of decobalt layer is 1.1% (percentage by weight);

[0070] Among them, the material grade of the cemented carbide substrate is YG10, and the specification is φ45mm×3.0mm;

[0071] 2) Purification of diamond micropowder: mix diamond micropowder with 250-mesh sodium chloride at a mass ratio of 1:2.5, put it into a molybdenum box after mixing, place it in a vacuum sintering furnace, and evacuate until the pressure in the furnace is 3×10 -3 Below Pa, raise the temperature to 750°C and keep it warm for...

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Abstract

The invention discloses a submicron diamond composite sheet and its preparation process. The preparation process includes: 1) decobalt on the surface of a hard alloy substrate; 2) purification of diamond micropowder; 3) preparation of polycrystalline diamond powder; 4) preparation of a composite Components; 5) Preparation of composite sheets. The submicron diamond composite sheet prepared by the invention can effectively prevent the abnormal growth of diamond crystal grains, thereby obtaining a relatively small and uniform structure to meet the requirements of finishing and superfinishing.

Description

technical field [0001] The invention belongs to the technical field of superhard materials, and in particular relates to a submicron diamond composite sheet and a preparation process thereof. Background technique [0002] Submicron diamond composite sheet is a double-layer diamond composite sheet sintered by submicron diamond powder (0.1-1μm) and cemented carbide substrate under high pressure and high temperature conditions. Because of its small diamond grain size, uniform structure and good wear resistance, as well as the characteristics of strong impact resistance and good weldability of cemented carbide, it is widely used in finishing and superfinishing of non-ferrous metal materials. field. [0003] At present, Sumitomo Electric Carbide Company of the United States has launched a submicron (0.5 μm) PCD grade of DA2200. The PCD tool of this grade can process extremely high workpiece surface finish and has high strength almost comparable to cemented carbide. , Japan's Su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B9/00B22F9/04B22F1/00B22F3/10B22F3/14B22F7/04B22F5/00C23F1/28C22C26/00
CPCC22C26/00C23F1/28B22F3/001B22F3/101B22F3/14B22F5/00B22F7/04B22F9/04B22F2009/043C22C2026/007C22C2026/006B22F1/105B22F1/142C23F1/02
Inventor 卢灿华张涛刘俊涛窦明
Owner ZHONGNAN DIAMOND CO LTD
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