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VCSEL-APD integrated chip and a preparation method thereof

A technology of integrating chips and structural layers, applied in the field of detection, can solve the problems of low integration of lasers and detectors, and achieve the effects of high integration, increased laser flux, and increased aperture ratio.

Active Publication Date: 2018-12-07
度亘核芯光电技术(苏州)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] For this reason, the technical problem to be solved by the present invention is: in the prior art, laser and detector integration degree is low

Method used

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  • VCSEL-APD integrated chip and a preparation method thereof
  • VCSEL-APD integrated chip and a preparation method thereof
  • VCSEL-APD integrated chip and a preparation method thereof

Examples

Experimental program
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Embodiment 1

[0054] The embodiment of the present invention provides a VCSEL and APD integrated chip, such as Figure 1-9 As shown, a substrate 1 is included, and a signal transmitting unit 2 and a signal receiving unit 3 distributed along the horizontal direction and separated from each other are arranged on the substrate 1; the signal transmitting unit 2 includes a first signal stacked on the substrate 1 The receiving structure layer 21 and the first signal transmitting structure layer 22 ; the signal receiving unit 3 includes a second signal receiving structure layer 31 and a second signal transmitting structure layer 32 stacked on the substrate 1 .

[0055] In this embodiment, the first signal transmitting structure layer 22 in the signal transmitting unit 2 and the second signal transmitting structure layer 32 in the signal receiving unit 3 are preferably vertical cavity surface emitting laser (VCSEL) structures. The first signal receiving structure layer 21 in the signal transmitting...

Embodiment 2

[0088] The embodiment of the present invention provides a method for preparing a VCSEL and APD integrated chip, comprising the following steps:

[0089] Step S21, forming a number of signal transmitting units 2 and signal receiving units 3 separated from each other on the substrate 1, the signal transmitting unit 2 includes a first signal receiving structure layer 21 and a first signal transmitting structure layer 22 arranged in layers, and the signal receiving unit The unit 3 includes a second signal receiving structure layer 31 and a second signal emitting structure layer 32 that are stacked, wherein the first signal receiving structure layer 21 and the second signal receiving structure layer 31 are both avalanche photodiodes ( APD) structure layer, and prepared in the same layer, the first signal emission structure layer 22 and the second signal emission structure layer 32 are vertical cavity surface emitting laser (VCSEL) structure layers, and prepared in the same layer.

...

Embodiment 3

[0114] The embodiment of the present invention provides a specific example of the preparation method of the VCSEL and APD integrated chip provided in the above-mentioned embodiment 2. Include the following steps:

[0115] Step 1: sequentially forming a buffer layer, an avalanche photodiode (APD) structure layer, an intermediate barrier layer and a vertical cavity surface emitting laser (VCSEL) structure layer on a P-InP substrate. Concrete structure and material are with embodiment 1. Thick silicon nitride (SiN) X ) as a mask, etch to the top of the P-InP buffer layer, form a cylindrical mesa of InGaAs APD on the front, and form the pattern and registration mark of the APD array on the back of the InP substrate (see figure 1 ).

[0116] Step 2: Utilize the ICP dry etching method configured with the OES function, use silicon nitride as a mask, etch to the top of the contact layer, and form the N-type lower electrode contact layer step of the APD (see figure 2 ).

[0117]...

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Abstract

The invention, which relates to the field of detecting technology, discloses a VCSEL-APD integrated chip and a preparation method thereof. The integrated chip comprises a signal transmitting unit, a signal receiving unit, a control unit and a data processing unit. The signal transmitting unit includes a first signal receiving structure layer and a first signal transmitting structure layer that arestacked; and the signal receiving unit includes a second signal receiving structure layer and a second signal transmitting structure layer that are laminated. Electrodes arranged on the first signaltransmitting structure layer are connected to one side of the signal transmitting unit electrically to form contact points; electrodes arranged on the second signal receiving structure layer are connected to one side of the signal receiving unit electrically to form contact points; and all contact points are connected to the control unit and the data processing unit respectively. The first signalreceiving structure layer and the second signal receiving structure layer are APD structure layers; and the first signal transmitting structure layer and the second signal transmitting structure layerare VCSEL structural layers. Therefore, a photoelectric sensing system with high integration of the VCSEL and APD is realized.

Description

technical field [0001] The invention relates to the technical field of detection, in particular to a VCSEL and APD integrated chip and a preparation method thereof. Background technique [0002] Because the vertical cavity surface emitting laser (VCSEL) has the advantages of low threshold current, long lifetime, fast modulation rate, small divergence angle, etc., it is usually combined with avalanche photodiode (APD) in the fields of lidar and three-dimensional sensing. [0003] However, in the current lidar and three-dimensional sensing technology fields, lasers and detectors are packaged into independent modules, which cannot be integrated into a single chip. In addition, high integration cannot be achieved between the laser and its control circuit, between the detector and its readout circuit, and between the control circuit and the readout circuit. Contents of the invention [0004] For this reason, the technical problem to be solved by the present invention is: in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/026
CPCH01S5/0262
Inventor 杨晓杰宋院鑫杨国文赵卫东
Owner 度亘核芯光电技术(苏州)有限公司
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