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A method for preparing ultra-thin porous nickel selenide nanosheet array by etching manganese-doped nickel hydroxide

A technology of nanosheet array and nickel hydroxide, which is applied in the manufacture of hybrid/electric double layer capacitors, hybrid capacitor electrodes, etc., can solve the problems of inability to have porosity, few contact active sites, and low capacitance performance, so as to increase the cycle The effects of stability, improved capacitance performance, and excellent conductivity

Active Publication Date: 2018-12-11
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the unreasonable structure of the existing transition metal selenide nanosheet electrode material. If it is an ultrathin nanosheet structure, it cannot have porosity, which affects ion mobility and accessible active sites; if it is a nanosheet with a porous structure However, the thickness is too thick, the contact active sites are few, and the energy storage is low, resulting in low capacitance performance. Therefore, a method for preparing ultra-thin porous nickel selenide nanosheet arrays by etching manganese-doped nickel hydroxide is provided. method

Method used

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  • A method for preparing ultra-thin porous nickel selenide nanosheet array by etching manganese-doped nickel hydroxide
  • A method for preparing ultra-thin porous nickel selenide nanosheet array by etching manganese-doped nickel hydroxide
  • A method for preparing ultra-thin porous nickel selenide nanosheet array by etching manganese-doped nickel hydroxide

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specific Embodiment approach 1

[0036] Embodiment 1: A method of preparing ultra-thin porous nickel selenide nanosheet arrays by etching manganese-doped nickel hydroxide in this embodiment is carried out in the following steps:

[0037] 1. Preparation of reaction solution:

[0038] Adding nickel nitrate, manganese chloride and cetyltrimethylammonium bromide into the mixed solution and fully mixing to obtain a reaction solution;

[0039]The total concentration of nickel nitrate and manganese chloride in the described reaction solution is 0.03mmol / mL~0.05mmol / mL; The concentration ratio of described nickel nitrate and manganese chloride is 1:(1~7); The described The concentration of cetyltrimethylammonium bromide in the reaction solution is 0.05mmol / mL~1.4mmol / mL; The mixed solution is a mixed solution of methanol and water, and the volume ratio of methanol and water in the mixed solution is 1:(1~6);

[0040] 2. Preparation of manganese-doped nickel hydroxide nanosheet arrays:

[0041] Immerse the nickel fo...

specific Embodiment approach 2

[0051] Embodiment 2: This embodiment differs from Embodiment 1 in that: the total concentration of nickel nitrate and manganese chloride in the reaction solution described in step 1 is 0.04 mmol / mL˜0.05 mmol / mL. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0052] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the concentration ratio of nickel nitrate and manganese chloride described in step 1 is 1: (1-4). Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a method for preparing ultra-thin porous nickel selenide nanosheet array by etching manganese-doped nickel hydroxide, which relates to the technical field of electrode materials for supercapacitors. As that electrode material structure of the exist transition metal selenide nano-sheet is unreasonable, if the electrode material is an ultra-thin nano-sheet structure, the electrode material cannot be porous, and the ion mobility and the contactable active site are affect; the electrode material structure of the transition metal selenidenano-sheet is unreasonable. If the nanosheets are porous, the thickness is too thick, the contact active sites are too few, and the energy storage is too low, so the capacitance performance is too low. Methods: 1. Preparation of reaction solution; 2, preparing a manganese doped nickel hydroxide nano sheet array; 3, selenide treatment; Fourthly, acid etching, that is, a method of preparing ultrathin porous nickel selenide nanolithicarray by etching manganese-doped nickel hydroxide is completed. The invention provides the method used for preparing ultra-thin porous nickel selenide nanosheet array by etching manganese doped nickelhydroxide.

Description

technical field [0001] The invention belongs to the technical field of supercapacitor electrode materials. Background technique [0002] Due to the gradual depletion of traditional energy sources and the deteriorating environment, the development of new energy storage devices has become a key problem to be solved urgently. Among them, benefiting from extremely high power density and extremely long cycle life, supercapacitors, one of the new energy storage devices, have become a research hotspot. As a key factor determining the performance of supercapacitors, electrode materials have become a breakthrough in solving energy and environmental problems. However, transition metal oxides and hydroxides are currently the most widely studied electrode materials for supercapacitors due to their abundant element reserves, low price, and outstanding capacitive performance. However, limited by the low conductivity and low accessible active sites of the currently developed transition m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G11/24H01G11/30H01G11/86
CPCH01G11/24H01G11/30H01G11/86Y02E60/13
Inventor 孙晔于登峰于淼赵公元孙菲菲李继伟张弘杜宝盛姜波李卓杨彬曹文武
Owner HARBIN INST OF TECH
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