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A crystal growth furnace verification system and a crystal growth furnace verification method

A technology of crystal growth furnace and seed chuck, which is applied in the field of calibration system of crystal growth furnace to achieve the effect of strong directionality

Active Publication Date: 2018-12-18
ZING SEMICON CORP
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Problems solved by technology

[0006] Aiming at the problems existing in the existing method of verifying the levelness of the pedestal in the crystal growth furnace chamber and the concentricity of the pedestal and the seed chuck, the present invention provides a crystal growth furnace verification system and a long Crystal furnace calibration method to improve calibration accuracy and calibration efficiency

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Embodiment Construction

[0028] The crystal growth furnace verification system and the crystal growth furnace verification method of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in very simplified form and use imprecise scales, and are only used to facilitate and clearly illustrate the embodiments of the present invention. For the convenience of description, spatially relative terms can be used here, such as "on...", "above...", "below...", "on the surface of...", "above" and so on. To describe the spatial positional relationship of one device or feature with other devices or features as shown in the drawings. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to th...

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Abstract

A crystal growth furnace verification system and a crystal growth furnace verification method utilizing the system are provided. The system includes a first laser source disposed on the center of theupper surface of a pedestal and a semitransparent baffle plate horizontally disposed on the pedestal. The first laser source is turned on and the pedestal is rotated around a rotation shaft so that the degree of levelness of the pedestal is adjusted through a movement path of a first light spot formed by first laser on the semitransparent baffle plate. The system can also be used for verifying thedegree of concentricity between the pedestal and a seed holder. A second light spot is formed on the semitransparent baffle plate by a second laser source disposed on the seed holder, and the degreeof concentricity between the pedestal and the seed holder is adjusted through the overlap ratio of the first and second light spots. The method utilizes the system and the verification accuracy and efficiency can be increased as positions and movement paths of laser beams are easy to distinguish.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment, in particular to a crystal growth furnace verification system and a crystal growth furnace verification method. Background technique [0002] The crystal growth furnace is a kind of equipment for synthesizing crystals. By converting the raw materials between solid phase, liquid phase and solid phase under certain conditions such as temperature and vacuum, crystals with specific linear dimensions are formed. Commonly used crystal growth furnaces include monocrystalline silicon growth furnaces, sapphire crystal growth furnaces, etc. [0003] figure 1 It is a schematic diagram of an existing crystal growth furnace. Such as figure 1 As shown, the crystal growth furnace includes a chamber (or furnace cavity) 100, and a base 110 is provided below the inside of the chamber 100. The base 110 is used to place a crucible (not shown) for holding raw materials. 110 is mounted on a vertica...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B15/32
CPCC30B15/20C30B15/32
Inventor 凌志鹏朴星昱车贤湖
Owner ZING SEMICON CORP
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