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Preparation method of polycrystalline silicon ingot

A polycrystalline silicon ingot and polycrystalline silicon technology, applied in the field of solar cells, can solve the problem of low nucleation rate and achieve the effect of high heterogeneous nucleation rate and uniform crystal grains

Inactive Publication Date: 2018-12-18
YINGLI ENERGY CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides a method for preparing polycrystalline silicon ingots, so as to solve the problem of low nucleation rate in the prior art when polycrystalline silicon ingots are prepared by full melting process

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  • Preparation method of polycrystalline silicon ingot
  • Preparation method of polycrystalline silicon ingot
  • Preparation method of polycrystalline silicon ingot

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Embodiment Construction

[0027] In the following description, specific details such as specific system structures and technologies are presented for the purpose of illustration rather than limitation, so as to thoroughly understand the embodiments of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced in other embodiments without these specific details. In other instances, detailed descriptions of well-known systems, devices, circuits, and methods are omitted so as not to obscure the description of the present invention with unnecessary detail.

[0028] In order to illustrate the technical solutions of the present invention, specific examples are used below to illustrate.

[0029] Please refer to figure 1 , figure 1 It is an implementation flowchart of a method for preparing a polycrystalline silicon ingot provided by an embodiment of the present invention, and the method includes the following steps:

[0030] Step S101 , coating an iso...

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Abstract

The invention belongs to the technical field of solar cells, and provides a preparation method of a polycrystalline silicon ingot. The preparation method of a polycrystalline silicon ingot comprises:coating a separator layer on an inner surface of a crucible coatedcovered with a seed crystal layer, wherein the separator layer at the bottom of the crucible is of a loose and porous structure; placing apolycrystalline silicon polysilicon material in the crucible after coating the separator layer, and placing the crucible in an ingot furnace; melting the polycrystalline silicon raw material, thenthe polycrystalline silicon raw material being crystallized into a polycrystalline silicon ingot on the basis of the seed crystal layer. According to the invention, the loose and porous separator layer is coatedcovered at the bottom of the crucible, so that a silicon liquid penetrates below the separator layer by means of the pores of the separator layer to contact the seed crystal layer, and then the seed crystal layer is used as a nucleation point to make the heterogeneous nucleation rate higher, and the crystal particles are more uniform.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for preparing polycrystalline silicon ingots. Background technique [0002] As the first process in the photovoltaic module industry chain, polycrystalline silicon ingot technology has a key impact on the efficiency of photovoltaic cells. The preparation process of the polycrystalline silicon ingot is to melt the silicon material and re-solidify it into a square silicon ingot with a certain grain structure and resistivity by means of directional growth. [0003] At present, the common process for preparing polycrystalline silicon ingots is the full melting process, that is, a seed layer is coated on the bottom of the crucible, and a silicon nitride isolation layer is coated on the upper surface of the seed layer. These seed layers will form a concave-convex structure on the bottom of the crucible. , by controlling the process conditions, the molten silicon material ...

Claims

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Application Information

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IPC IPC(8): C30B29/06C30B28/06
CPCC30B28/06C30B29/06
Inventor 夏新中张莉沫张任远孟庆超陈志军张建旗刘莹
Owner YINGLI ENERGY CHINA
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