Device and method for measuring phase change temperature of thin film material

Abstract

The invention relates to a device for measuring phase change temperature of a thin film material. The device for measuring phase change temperature of the thin film material comprises a substrate, electrodes, an infrared temperature detector, a laser light source, a Doppler detector and a femtosecond pulse laser light source. The substrate is used for laying the thin film to be tested, the electrodes are arranged on the thin film to be tested, and the infrared temperature detector monitors the temperature of the thin film to be tested. The laser light source obliquely emits detection light tothe surface of the thin film to be tested, and the femtosecond pulse laser light source vertically injects femtosecond laser pulses to a same incident point, so that sound waves are generated in the thin film, the reflected light of the detection light on the surface of the thin film to be tested to cause Doppler shift, and the Doppler detector is used for detecting Doppler shift signals of the reflected light. According to the device and method for measuring phase change temperature of the thin film material, femtosecond laser is utilized to induce the thin film to generate the sound waves, the difference in refractive index between the crystalline state and the amorphous state of the thin film is utilized to reflect the time difference that the sound waves propagate back and forth in thethin film with a certain thickness, and the Doppler frequency shift signals of the reflected light are detected through the Doppler detector, and the device for measuring phase change temperature ofthe thin film material has the advantages of fast and nondestructive measurement.

Description

technical field [0001] The invention relates to the technical field of thin film thermal performance detection, in particular to a measuring device and method for detecting the phase transition temperature of thin film phase change materials. Background technique [0002] In recent years, non-volatile memory (NVM) technology has made some significant progress in many aspects, which has brought new opportunities for the improvement of storage energy efficiency in computer systems. Researchers have suggested that new NVM technology should be used to replace traditional storage technology to meet the demand for high storage energy efficiency in the development of computer technology. A variety of new NVM technologies represented by phase-change memory have attracted extensive attention from researchers at home and abroad because of their high integration and low power consumption. Phase-change memory stores data by using the difference in conductivity of phase-change materials...

AI Technical Summary

Problems solved by technology

[0003] At present, the commonly used methods for measuring the phase transition temperature of materials are mainly differential thermal analysis (DSC) and variable temperature X-ray diffraction. The former needs to scrape the film sample into powder, which is a destructive measurement, and has certain requirements for the thickness of the film. Thin films cannot be measured; the latter has limited measurement accuracy, and the measurement error of high-temperature thin films is relatively large, and continuous and transient measurements cannot be performed

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