A power device protection chip and a manufacturing method thereof

A technology for protecting chips and power devices, which is applied in the field of power device protection chips and its production, and can solve the problems of increasing device area and manufacturing cost

Inactive Publication Date: 2018-12-18
深圳市华安半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently commonly used power device protection chips, if two-way protection is required, multiple power device

Method used

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  • A power device protection chip and a manufacturing method thereof
  • A power device protection chip and a manufacturing method thereof
  • A power device protection chip and a manufacturing method thereof

Examples

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Embodiment Construction

[0041] The invention will be described in more detail below with reference to the accompanying drawings. In the various figures, the same elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0042] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0043] If the purpose is to describe the situation directly on another layer or another a...

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PUM

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Abstract

The invention provides a power device protection chip and a manufacturing method thereof, the chip comprising the following steps: a substrate of a first conductivity type; A first epitaxial layer ofa second conductivity type; A first buried layer of a first conductivity type and a second buried layer of a second conductivity type, formed in the first epitaxial layer; A second epitaxial layer ofthe first conductivity type; A first injection region of a first conductivity type and a second injection region of a second conductivity type formed on an upper surface of the second epitaxial layer,and the first injection region is connected to the second injection region; A polycrystalline silicon layer penetrating the second epitaxial layer and connected to the first implanted region and thefirst buried layer, respectively; A dielectric layer formed on an upper surface of the second epitaxial layer; A first electrode including a first portion penetrating the dielectric layer and extending to the second implantation region and a second portion formed on a surface of the dielectric layer; A second electrode formed on a lower surface of the substrate. The invention can improve device performance and reduce device cost.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a power device protection chip and a manufacturing method thereof. Background technique [0002] The power device protection chip is a solid-state semiconductor device specially designed to protect sensitive semiconductor devices from transient voltage surge damage. It has small clamping coefficient, small size, fast response, small leakage current and reliable High performance, so it has been widely used in voltage transient and surge protection. The low-capacitance power device protection chip is suitable for high-frequency circuit protection devices, because it can reduce the interference of parasitic capacitance on the circuit and reduce the attenuation of high-frequency circuit signals. [0003] Electrostatic discharge, as well as other random voltage transients in the form of voltage surges, are commonly found in a variety of electronic devices. As semiconductor de...

Claims

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Application Information

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IPC IPC(8): H01L27/02
CPCH01L27/0255
Inventor 不公告发明人
Owner 深圳市华安半导体有限公司
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