Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for forming transparent conductive pattern

A technology of transparent conductivity and transparent conductivity, which is applied in the direction of conductive pattern formation, conductive materials, conductive materials, etc., can solve problems affecting conductive performance, damage to metal nanowires and/or metal nanotubes, and achieve the effect of reducing damage

Active Publication Date: 2020-09-11
RESONAC CORPORATION
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In this method, depending on the conditions of screen printing, the metal nanowires and / or metal nanotubes will be damaged during repeated printing, and this damage will affect the electrical conductivity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for forming transparent conductive pattern
  • Method for forming transparent conductive pattern
  • Method for forming transparent conductive pattern

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088]

[0089] Polyvinylpyrrolidone K-90 (manufactured by Nippon Catalyst Co., Ltd.) (0.49 g), AgNO 3 (0.52g) and FeCl 3 (0.4 mg) was dissolved in ethylene glycol (125 ml), and a heating reaction was carried out at 150°C for 1 hour. The obtained precipitates were separated by centrifugation, and the precipitates were dried to obtain the target silver nanowires (average diameter: 36 nm, average length: 20 µm). The above ethylene glycol, AgNO 3 and FeCl 3 It is manufactured by Wako Pure Chemical Industry Co., Ltd.

[0090]

[0091] After adding 6 times the volume of dibutyl ether to the reaction solution of the above silver nanowires obtained by performing a heating reaction at 150° C. for 1 hour and stirring, the nanowires were allowed to stand still to precipitate. After the nanowires were precipitated, the supernatant was separated by decantation, thereby performing solvent replacement to obtain a suspension of silver nanowires dispersed in dibutyl ether (viscosity a...

Embodiment 2

[0100] Instead of attaching the squeegee at an attachment angle of 60°, the squeegee was attached at an attachment angle of 65°, and printed in the same manner as in Example 1 except that. In this embodiment, by installing the scraper at an installation angle of 65°, the angle of attack at the top end of the scraper becomes 30°.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
angleaaaaaaaaaa
viscosityaaaaaaaaaa
Login to View More

Abstract

The object is to provide a method for forming a transparent conductive pattern by reducing the stress on the metal nanowires and / or metal nanotubes in screen printing using a transparent conductive ink containing metal nanowires and / or metal nanotubes as a conductive component. damage, a transparent conductive pattern can be formed using a simple manufacturing process, and the manufacturing cost and environmental load can be suppressed. The solution is to screen-print the transparent conductive ink (5) with the angle of attack of the tip of the squeegee in contact with the screen mask (2) in the range of 1 to 30°, and the transparent conductive ink (5) Containing at least one of metal nanowires and metal nanotubes and a dispersion medium.

Description

technical field [0001] The invention relates to a method for forming a transparent conductive pattern. Background technique [0002] Transparent conductive film is used in liquid crystal display (LCD), plasma display panel (PDP), organic electroluminescent device (OLED), solar cell (PV) and transparent electrode of touch screen (TP), antistatic (ESD) film and electromagnetic wave shielding ( (1) low surface resistance, (2) high light transmittance, and (3) high reliability are required for use in various fields such as EMI) film. [0003] For example, for a transparent electrode of an LCD, it is suitable that the surface resistance is in the range of 10-300 Ω / □, and the light transmittance is 85% or more in the visible light range. A more preferable range is that the surface resistance is 20 to 100Ω / □, and the light transmittance is 90% or more. For the transparent electrode of OLED, it is suitable that the surface resistance is in the range of 10-100Ω / □, and the light tra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00B41M1/12C09D11/037C09D11/52H01B1/00H01B1/22H05K3/12
CPCB41M1/12C09D11/037C09D11/52H01B1/00H01B1/22H01B13/00H05K3/12H05K3/1216
Inventor 若林正一郎山木繁
Owner RESONAC CORPORATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com