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Silicon-based hardmask

A group, hydrocarbon-based technology, applied in the field of semiconductor device manufacturing, can solve problems such as the incompatibility of resist patterns and the like

Active Publication Date: 2018-12-25
ROHM & HAAS ELECTRONIC MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The continued reduction in the thickness of the resist used makes the resist pattern unsuitable as a mask for transferring the pattern by the RIE method

Method used

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  • Silicon-based hardmask
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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0051] Example 1. Addition of phenyltrimethoxysilane (PTMS, 12.7g), vinyltrimethoxysilane (VTMS, 4.75g), bis(triethoxysilyl)ethylene (BSE, 83.5g) and isopropanol over 10 minutes (80 g) was added HCl 0.1 N (0.265 g) and isopropanol (80 g) dissolved in water (29.45 g) and stirred for a further 50 minutes. The reaction mixture was heated to 69 °C for 24 hours, cooled to room temperature, diluted with PGEE (300 g), and the volatiles were removed under reduced pressure. The concentration of the mixture was adjusted to 10 wt% solids by adding PGEE to give a clear solution with a molecular weight of 27,100 relative to polystyrene standards.

example 2

[0053] Example 2. Addition of phenyltrimethoxysilane (PTMS, 6.35g), vinyltrimethoxysilane (VTMS, 9.50g), bis(triethoxysilyl)ethylene (BSE, 83.5g) and isopropanol over 10 minutes (80 g) was added HCl 0.1 N (0.265 g) and isopropanol (80 g) dissolved in water (29.5 g) and stirred for a further 50 minutes. The reaction mixture was heated to 69 °C for 18 hours, cooled to room temperature, diluted with PGEE (300 g), and the volatiles were removed under reduced pressure. The concentration of the mixture was adjusted to 10 wt% solids by adding PGEE to give a clear solution with a molecular weight of 19,300 relative to polystyrene standards.

example

[0057] Examples of formulations. The procedure of Formulation Example 1 was repeated using the components and amounts reported in Table 1 to prepare Formulation Example 2 and Comparative Formulation Examples 1 to 3. In Table 1, component 1 refers to the polymer added to each formulation, component 2 is a 0.1 wt% solution of tetrabutylammonium chloride in PGEE, component 3 is PGEE, and component 4 is lactic acid ethyl ester and component 5 is methyl 2-hydroxyisobutyrate.

[0058] Table 1

[0059]

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PUM

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Abstract

Compositions for forming thin, silicon-containing antireflective coatings and methods of using these compositions in the manufacture of electronic devices are provided. Silicon-containing antireflective coatings formed from these compositions can be easily removed during processing without the need for a separate removal step.

Description

technical field [0001] The present invention relates generally to the field of semiconductor device fabrication, and more particularly, to silicon-based hardmasks used in semiconductor device fabrication. Background technique [0002] In a conventional photolithography method, using a resist pattern as a mask, the pattern is transferred to a substrate by a suitable etching method, such as by reactive ion etching (RIE). The continued reduction in the thickness of the resist used makes the resist pattern unsuitable as a mask for pattern transfer by the RIE method. Therefore, alternative methods using three, four or more layers as masks for transferring patterns have been developed. For example, in a three-layer approach, a silicon-containing antireflective layer is disposed between the bottom layer / organic planarization layer and the resist layer. The three-layer scheme provides highly selective pattern transfer from the resist pattern on top of the Si-containing layer to th...

Claims

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Application Information

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IPC IPC(8): C08G77/20C08G77/06G03F1/76G03F7/004G03F7/075
CPCC08G77/06C08G77/20G03F1/76G03F7/004G03F7/075C08G77/80G03F7/0752G03F7/094C09D183/14C08G77/50H01L21/0276G03F7/091G03F7/2063G03F7/70691H01L21/0337C09D183/04C09D5/006C08G77/04C09D7/20
Inventor S·M·科莱P·J·拉博姆山田晋太郎C·W·卡里尔崔莉B·波普尔
Owner ROHM & HAAS ELECTRONIC MATERIALS LLC