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Groove-gate diode with composite structure

A composite structure and diode technology, used in electrical components, circuits, semiconductor devices, etc., can solve the problems of unsatisfactory high temperature reliability of Schottky junctions, and achieve good reliability, short reverse recovery time, and low forward voltage. drop effect

Inactive Publication Date: 2019-01-01
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The TMBS rectifier was first proposed by B.J.Baliga in 1993, such as figure 1 As shown, although the device effectively improves the reverse leakage and breakdown voltage of the planar Schottky diode, the unsatisfactory high-temperature reliability of the Schottky junction is still a problem, especially during high-temperature operation.

Method used

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  • Groove-gate diode with composite structure
  • Groove-gate diode with composite structure
  • Groove-gate diode with composite structure

Examples

Experimental program
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Effect test

Embodiment 1

[0019] A slot gate diode with a composite structure, such as figure 2 As shown, it includes an N-type semiconductor substrate 7, a cathode 8 located at the bottom of the N-type semiconductor substrate 7, an N-type semiconductor drift region 6 located on the upper layer of the N-type semiconductor substrate 7, and a gate oxide layer located on the upper layer of the N-type semiconductor drift region 6. Layer 2 and the anode 1 located on the upper layer of the gate oxide layer 2; the gate oxide layer 2 is a trench gate structure; it is characterized in that a first N-type semiconductor doped region is provided between the gate oxide layers 2 on both sides of the trench 5. The first P-type semiconductor doped region 3; the first N-type semiconductor doped region 5 is located on the sidewall of the trench and is connected to the gate oxide layer 2; the first P-type semiconductor doped region 3 is located in the trench Between the first N-type semiconductor doped regions 5 on both s...

Embodiment 2

[0024] Such as Figure 4 As shown, the structure of this example is based on Example 1, the P-type buried layer 4 is stretched, and the lower surface of the P-type buried layer 4 is in contact with the upper surface of the N-type semiconductor substrate 7. The working principle of this example As in Embodiment 1, the reverse withstand voltage of the trench gate diode can be further improved.

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Abstract

The present invention designs a power semiconductor technology, and especially relates to a groove-gate diode with a composite structure. The groove-gate diode which is commonly controlled by an accumulation layer and a P-type buried layer, employs an MOS and a PN-junction structure, and achieves lower forward voltage drop in the same current density because the electron accumulation layer is conductive when a forward direction is opened; and through the PN-junction withstand voltage, the device is better in the reliability at a high temperature. The groove-gate diode with the composite structure belongs to majority carrier devices, and is short in reverse recovery time.

Description

Technical field [0001] The invention relates to power semiconductor technology, in particular to a slot gate diode with a composite structure. Background technique [0002] In electronic circuits, diodes are one of the most commonly used electronic components. Traditional rectifier diodes are mainly Schottky rectifiers and PN junction rectifiers. Among them, the PN junction diode can withstand higher reverse blocking voltage and has better stability, but its forward conduction voltage drop is larger and the reverse recovery time is longer. Schottky diodes are made using the principle of metal-semiconductor junction formed by the contact between metal and semiconductor, and the on-state voltage drop is low. Due to the unipolar carrier conduction, the Schottky diode has no excess minority carrier accumulation during forward conduction, and the reverse recovery is faster. However, the reverse breakdown voltage of Schottky diodes is relatively low, the reverse leakage current is re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06
CPCH01L29/0623H01L29/8725
Inventor 李泽宏杨梦琦宋炳炎任敏张金平高巍张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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