Binding method for ITO target material or other ceramic target materials

A ceramic target and target technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problems of uneven sputtering, target cracking, etc., and achieve good thermal conductivity, cooling and electrical properties. Good contact performance

Inactive Publication Date: 2019-01-04
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the ITO targets prepared by the prior art still often have problems such as sputtering unevenness and target cracking during sputtering. Therefore, it is urgent to propose a binding method for ITO targets or other ceramic targets. method to solve the above technical problems

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A binding method for ITO targets or other ceramic targets. The selected target blank is a rectangular plane with an area of ​​20cm×30cm and a flatness of 0.05mm; the material used for the back plate is copper, the oxygen content is less than 200ppm, and the flatness is is 0.06mm.

[0031] Put the target blank and the back plate into a heating platform for heating respectively. The temperature control accuracy of the back plate heating platform is ±5°C, and the temperature control accuracy of the target blank heating platform is ±3°C.

[0032] Surface metallization of the target blank: place the target blank on the target blank heating platform, raise the temperature of the target blank to 90°C at a heating rate of 2°C / min, keep it warm for 25 minutes, and then raise the temperature to 180°C at a heating rate of 2°C / min. Keep warm for 120 min, then pour the melted indium into the surface of the target blank, scrape the indium to cover the entire surface of the target bla...

Embodiment 2

[0039] A binding method for ITO targets or other ceramic targets. The selected target blank is a circular plane, Φ=25cm, and the flatness is 0.10mm; the material used for the back plate is copper, the oxygen content is less than 200ppm, and the flatness is 0.08mm.

[0040] Put the target blank and the back plate into a heating platform for heating respectively. The temperature control accuracy of the back plate heating platform is ±5°C, and the temperature control accuracy of the target blank heating platform is ±3°C.

[0041] Surface metallization of the target blank: heat the target blank to 90°C at a heating rate of 3°C / min, hold it for 30 minutes, then raise it to 190°C at a heating rate of 1°C / min, hold it for 100 minutes, and pour the melted indium Enter the surface of the target blank, scrape the indium to cover the entire target surface, then turn on the ultrasonic indium coating machine, touch the indium coating probe to the surface of the target blank, and brush the ...

Embodiment 3

[0048] A binding method for ITO targets or other ceramic targets. The selected target blank is a square plane with a size of 22cm×22cm and a flatness of 0.06mm; the material used for the back plate is copper, the oxygen content is less than 200ppm, and the flatness is 0.10mm.

[0049] Put the target blank and the back plate into a heating platform for heating respectively. The temperature control accuracy of the back plate heating platform is ±5°C, and the temperature control accuracy of the target blank heating platform is ±3°C.

[0050] Surface metallization of the target blank: raise the temperature of the target blank to 90°C at a heating rate of 2.5°C / min, keep it for 25 minutes, then raise it to 185°C at a heating rate of 1.5°C / min, keep it for 100 minutes, and pour the melted indium Enter the surface of the target blank, scrape the indium to cover the entire surface of the target blank, then turn on the ultrasonic indium coating machine, touch the indium coating probe t...

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PUM

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Abstract

The invention relates to a binding method for an ITO target material or other ceramic target materials. The binding method comprises the following steps: S1, metallizing the surface of a target blank;S2, metallizing the surface of a back plate; S3, processing a binding indium layer; S4, binding the target material; and S5, cooling. The method is capable of binding the target blank and the back plate of ITO by using indium. The prepared ITO target material or the other ceramic target materials have good cooling and electric contact performance, and a good heat-conducting property, wherein a welded rate thereof is greater than 98%, and higher than the prior art. In a practical application, the prepared ITO target material or the other ceramic target materials have not non-uniform sputteringand target material cracking problems in a sputtering process.

Description

technical field [0001] The present invention relates to the field of target preparation, in particular to a target binding method, and more specifically, to a binding method for ITO targets or other ceramic targets. Background technique [0002] The development of the structure of materials to two-dimensional (thin film) is an important way to fully realize the potential of materials. The transfer of high-tech materials from bulk materials to thin films has led to the rapid development of film-coated devices. [0003] Sputtering is an important method for preparing thin film materials. The accelerated ions are used to bombard the solid surface, and the ions and solid surface atoms exchange momentum, so that the atoms on the solid surface leave the solid and deposit on the substrate surface. This process is called sputtering. The bombarded solid is the source material for the deposited film, usually called the target, and the targets used in the sputter coating industry are...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/08
CPCC23C14/086C23C14/3414
Inventor 余芳朱刘童培云
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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