Semiconductor device and method of forming the same
A semiconductor and device technology, applied in the field of semiconductor devices and their formation, can solve the problems of poor performance of semiconductor devices, etc., and achieve the effects of enhanced etching resistance, improved dimensional stability, and low loss
Active Publication Date: 2020-10-09
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, the performance of semiconductor devices formed using the above-mentioned double patterning technique of LELE is poor
Method used
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Embodiment Construction
[0031] As mentioned in the background, semiconductor devices formed in the prior art have poor performance.
[0032] A method for forming a semiconductor device includes: providing a material layer to be etched, a top mask layer is provided on the material layer to be etched, and the material of the top mask layer is silicon carbide; forming a first opening through the top mask layer; after forming the first opening, performing an intermediate patterning process; after performing an intermediate patterning process, forming a second opening penetrating through the top mask layer in the top mask layer, The second opening is separated from the first opening.
[0033]However, the performance of the semiconductor device formed by the above-mentioned method is relatively poor. After research, it is found that the reasons are:
[0034] The first opening and the second opening are used to jointly form the target pattern in the top mask layer, and the positions of the first opening an...
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Abstract
The invention provides a semiconductor device and a forming method thereof. The method includes providing a material layer to be etched, wherein the material layer to be etched is provided with a toplayer mask layer; forming a first opening running through the top layer mask layer in the top layer mask layer, the sidewall material of the first opening having a first density; performing a first surface treatment process on the sidewall of the first opening such that the sidewall material of the first opening has a second density, the second density being greater than the first density; performing an intermediate patterning process after the first surface treatment process; and after performing the intermediate patterning process, forming a second opening running through the top layer masklayer in the top layer mask layer, the second opening and the first opening being separated from each other. The method improves the performance of the semiconductor device.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] In the manufacturing process of semiconductor devices, photolithography is usually used to transfer the pattern on the mask plate to the substrate. The photolithography process includes: providing a substrate; forming a photoresist layer on the substrate; exposing and developing the photoresist layer to form a patterned photoresist layer; using the patterned photoresist layer as a mask The film etches the substrate such that the pattern on the photoresist layer is transferred into the substrate; the photoresist layer is removed. With the continuous shrinking of the size of semiconductor devices, the critical dimensions of lithography are gradually approaching or even exceeding the physical limit of lithography, which poses more severe challenges to lithography technology. The basic idea...
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IPC IPC(8): H01L21/033
CPCH01L21/0334H01L21/0337
Inventor 王士京姚达林张海洋
Owner SEMICON MFG INT (SHANGHAI) CORP