Memory and method for forming same, semiconductor device

Abstract

The invention provides a memory, a forming method thereof, and a semiconductor device. The mask support body and the sacrificial layer are formed by self-alignment using the first mask layer corresponding to the word line pattern, and a cavity is formed by self-alignment in combination with the second mask layer to define the storage node contact and the bit line contact. A region is formed, and under the action of the isolation barrier of the mask support body and the sacrificial layer, a storage node contact and a bit line contact can be sequentially formed in the cavity. That is, in the process of forming the storage node contact and the bit line contact, only one photolithography process is used, which reduces the number of execution times of the photolithography process, and avoids the problem of large displacement deviation due to multiple photolithography processes, and then Contact resistance between the storage node contact and the storage node contact region, and between the bit line contact and the bit line contact region can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a memory, a method for forming the same, and a semiconductor device. Background technique [0002] A memory typically includes a storage capacitor for storing charge representing stored information and a storage transistor connected to the storage element. An active region, a drain region, and a gate are formed in the memory transistor, the gate is used to control the flow of current between the source region and the drain region, and is connected to a word line, and the source region is used to form a bit A line contact region is used to connect to a bit line, and the drain region is used to form a storage node contact region to connect to a storage capacitor. [0003] Usually, after the word line is formed, a bit line contact needs to be formed on the bit line contact area, and then connected to the bit line through the bit line contact, and a storage node contact area ...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for forming a memory, so as to solve the problem that in the existing method of forming, multiple photolithography processes are required, which not only makes the preparation cost higher, but also easily produces displacement deviation, which in turn leads to bit line contact. The problem of large contact resistance between the contact area of ​​the bit line and the contact area of ​​the storage node and the contact area of ​​the storage node

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