Crystal growth control method, device and system and computer storage medium

Abstract

The invention provides a crystal growth control method, device and system for a shouldering process and a computer storage medium. The method comprises: presetting crystal diameter change values and crystal growth process parameters at different stages of the shouldering process, acquiring crystal diameters at different stages of the shouldering process, calculating a change value, comparing the change value of the crystal diameters and the set values to obtain a difference value as an input variable of a PID algorithm, calculating an adjustment value of the crystal growth process parameter through the PID algorithm, wherein the adjustment value is used as an output variable of the PID algorithm, and adding the adjustment value of the crystal growth process parameter to the set value to obtain a process parameter in the actual crystal growth process. The PID algorithm is used for controlling and adjusting the diameter change of the shouldering process, prevents the influence of the thermal field slight change on the shouldering process, guarantees the consistent change of the crystal diameters and improves the repeatability and process stability of the shouldering process.

Description

technical field [0001] The present invention relates to the field of crystal growth, in particular to a crystal growth control method, device, system, and computer storage medium, and in particular to a crystal growth control method, device, system, and computer storage medium for shouldering. Background technique [0002] Monocrystalline silicon is a semiconductor material commonly used in the manufacture of integrated circuits and other electronic components. In the process of preparing silicon single crystal, it is mainly by immersing a seed crystal with a smaller diameter into the silicon melt, and growing a fine crystal with a smaller diameter through seeding to discharge dislocations to achieve the purpose of growing zero dislocation crystals. After that, the shouldering process will be used to make the crystals grow from fine crystals to the target diameter, and then the crystals of the required size will be obtained through equal diameter growth. [0003] The should...

AI Technical Summary

Problems solved by technology

However, in the actual crystal growth process, due to the use time of the thermal field, the seeding temperature, and the life of the heater, there will be some differences in each crystal growth, so if the temperature and crystal pulling speed setting cannot be adjusted in time, it will lead to the shouldering process. lose crystal structure

In addition, changes in different crystal growth conditions will also lead to differences in the shouldering process, making shouldering the most difficult part of the crystal growth process development process, requiring many attempts to find the appropriate temperature and crystal pulling speed settings

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