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3D memory device and method of making the same

A technology of storage device and manufacturing method, applied in the field of storage, can solve the problem that metal wiring density affects the yield and reliability of 3D storage device, etc.

Active Publication Date: 2021-04-09
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The increase in metal wiring density will affect the yield and reliability of 3D memory devices

Method used

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  • 3D memory device and method of making the same
  • 3D memory device and method of making the same
  • 3D memory device and method of making the same

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Embodiment Construction

[0024] Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings. In the various figures, identical elements are indicated with similar reference numerals. For the sake of clarity, various parts in the drawings have not been drawn to scale. Also, some well-known parts may not be shown. For the sake of simplicity, the semiconductor structure obtained after several steps can be described in one figure.

[0025] It should be understood that when describing the structure of a device, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean being directly on another layer or another region, or Other layers or regions are also included between it and another layer or another region. And, if the device is turned over, the layer, one region, will be "below" or "beneath" the other layer, another region.

[0026] If it is to describe the situation directly on another layer or an...

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PUM

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Abstract

The application discloses a 3D storage device and a manufacturing method thereof. The 3D memory device includes: a stacked structure, the stacked structure includes a plurality of gate conductors and a plurality of interlayer insulating layers stacked alternately; a plurality of channel pillars running through the stacked structure; A plurality of bit lines and a common source line on the surface of the channel column, one end of the channel column is connected to a corresponding bit line in the plurality of bit lines, and the other end is commonly connected to the common source line; wherein, in the stack On the surface of the layer structure, the plurality of bit lines and common source lines are distributed alternately. The 3D memory device adopts common source lines and bit lines interleaved on the surface of the stacked structure of the 3D memory device, and the interleaved wiring can utilize the common source lines between the bit lines to isolate the two, thereby reducing parasitic capacitance and parasitic resistance. Improve storage density and access speed, thereby improving the yield and reliability of 3D storage devices.

Description

technical field [0001] The present invention relates to the technical field of memory, and more particularly, to a 3D memory device and a manufacturing method thereof. Background technique [0002] The improvement of the storage density of the memory device is closely related to the progress of the semiconductor manufacturing process. As the feature size of the semiconductor manufacturing process becomes smaller and smaller, the storage density of the memory device becomes higher and higher. In order to further increase storage density, memory devices with a three-dimensional structure (ie, 3D memory devices) have been developed. A 3D memory device includes a plurality of memory cells stacked in a vertical direction, which can double the integration level on a wafer per unit area and reduce the cost. [0003] Existing 3D memory devices are mainly used as non-volatile flash memory. The two main non-volatile flash memory technologies use NAND and NOR structures, respectivel...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11582H10B43/27
CPCH10B43/27
Inventor 胡斌肖莉红
Owner YANGTZE MEMORY TECH CO LTD