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CdZnTe semiconductor detector imaging quality assessment method

An imaging quality and detector technology, applied in the field of detectors, can solve problems such as inability to effectively evaluate and improve detector imaging performance

Pending Publication Date: 2019-01-29
CHONGQING UNIV OF POSTS & TELECOMM
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Problems solved by technology

In the actual performance evaluation and production process of the detector, the traditional slit MTF test method is usually used, which is currently unable to effectively evaluate and improve the imaging performance of the detector

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  • CdZnTe semiconductor detector imaging quality assessment method
  • CdZnTe semiconductor detector imaging quality assessment method
  • CdZnTe semiconductor detector imaging quality assessment method

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Embodiment Construction

[0032] The technical solutions in the embodiments of the present invention will be described clearly and in detail below with reference to the drawings in the embodiments of the present invention. The described embodiments are only some of the embodiments of the invention.

[0033] The technical scheme that the present invention solves the problems of the technologies described above is:

[0034] The invention is a method for obtaining the pre-sampling MTF of a radiation imaging detector based on a CdZnTe crystal material. Imaging CdZnTe detectors have a common structure, coupling CdZnTe material with ASIC for analog signal processing and further digital signal processing. The continuous cathode is held at negative potential, and the pixelated anode is held at ground potential through a node integrating a charge-sensitive amplifier. Once the eight key parameters were determined or measured, the fundamental relationship between the presampled MTF as a function of detector geo...

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Abstract

The invention provides a CdZnTe semiconductor detector imaging quality assessment method. According to the method, a slit imaging device is established by using a CdZnTe detector to measure the corresponding modulation transfer function (MTF), and pre-sampling MTF calculation is accordingly calculated through the key physical parameters of the experimental device, such as the detector thickness L;the applying electric field E; the hole mobility muh; the hole life tauh; the electron mobility mue; the electron life taue; the linear attenuation coefficient mua related to the incident photon energy; and the pixel size b, and the calculation result is used for correcting the actual experimental test result so as to achieve the higher imaging performance evaluation result. The invention also provides a CdZnTe imaging detector design method. The high MTF performance is realized by selecting different key parameters so that the detector design can be optimized.

Description

technical field [0001] The invention belongs to the technical field of detectors, in particular to CdZnTe imaging detector detection technology. Background technique [0002] Imaging detectors based on CdZnTe have excellent electron carrier transport capability and high detection efficiency at room temperature, and have undergone rapid development due to the development of growth techniques for CdZnTe materials over the past few decades. As common knowledge, when incident photons interact with the CdZnTe material, the signal from the pixel electrode builds up, while the electrons and holes drift towards the anode and cathode, respectively. Each free carrier contributes to the induced charge until the carrier is trapped or reaches an electrode. Trapped carriers caused by poor transport properties generate a signal near the incident central region. This causes the sensing signal to spread laterally, which leads to degraded detector performance. [0003] For CdZnTe detectors...

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Application Information

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IPC IPC(8): G01T7/00
CPCG01T7/005
Inventor 黎淼赵明坤丁科宇黄丹
Owner CHONGQING UNIV OF POSTS & TELECOMM
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