Ceramic aluminum-clad aluminum-copper plate, method for fabricating same, heat dissipating component, and IGBT module

A technology for heat dissipation components and aluminum cladding is applied in the fields of ceramic aluminum clad copper plates and their preparation, heat dissipation components and IGBT modules. Achieve high connection strength and heat conduction efficiency, high yield and prolong service life

Active Publication Date: 2019-02-05
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing IGBT chip ceramic copper-clad heat conductors are produced using vacuum welding technology. The vacuum welding technology is not only complicated, but the production cycle is long. Bubbles or uneven solder layers during the welding process will cause the solder layer to form cavities of different shapes and sizes; The voids will cause the current intensive effect, resulting in thermoelectric breakdown, poor heat conduction, etc., which will reduce the packaging yield of the ceramic copper-clad heat conductor and shorten the service life.

Method used

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  • Ceramic aluminum-clad aluminum-copper plate, method for fabricating same, heat dissipating component, and IGBT module
  • Ceramic aluminum-clad aluminum-copper plate, method for fabricating same, heat dissipating component, and IGBT module
  • Ceramic aluminum-clad aluminum-copper plate, method for fabricating same, heat dissipating component, and IGBT module

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Effect test

preparation example Construction

[0033] The second aspect of the present disclosure provides a method for preparing a ceramic aluminum-copper clad laminate, the method comprising the following steps:

[0034] S1. Put the ceramic insulating board 1, the first copper layer 4, and the second copper layer 5 into the aluminized mold 11, and make a first gap between the ceramic insulating board 1 and the first copper layer 4 9 and there is a second gap 10 between the ceramic insulating board 1 and the second copper layer 5;

[0035] S2. Under pressure casting infiltration conditions, molten aluminum is added to the aluminized mold 11 and filled into the first void 9 and the second void 10 and vacuumized and pressurized, and then cooled demoulding;

[0036] S3. Removing part of the aluminum metal in the first gap 9 and the second gap 10 by etching, so that the remaining aluminum metal in the first gap 9 forms the first aluminum layer 2 and the second gap 10 The remaining aluminum metal in forms the second aluminum...

Embodiment 1

[0047] This example is used to illustrate the preparation method of the ceramic aluminum-copper clad laminate.

[0048] Alumina ceramic insulating board 1 with a thickness of 0.38mm, a length of 67mm, and a width of 61mm, a first copper layer with a thickness of 0.3mm, a length of 67mm, and a width of 61mm 4, a thickness of 0.3mm, a length of 67mm, and a width of 61mm The second copper layer 5 is packed into the aluminized mold 11; the center of the first copper layer 4, the second copper layer 5 and the ceramic insulating plate 1 is on a straight line, and makes the ceramic insulating plate 1 and the first There is a first gap 9 of 0.05 mm between the copper layers 4 and a second gap 10 of 0.05 mm between the ceramic insulating board 1 and the second copper layer 5 .

[0049] Preheat the aluminized mold 11 to a temperature of 600°C, add molten aluminum at 700°C to the aluminized mold 11, vacuumize the aluminized mold 11 to a pressure of 80Pa, and then pressurize to a pressure...

Embodiment 2

[0053] This embodiment is used to illustrate the preparation method of the heat dissipation element including the ceramic aluminum-copper clad laminate.

[0054] Toughened alumina ceramic insulating board 1 with a thickness of 0.32 mm, a length of 67 mm, and a width of 61 mm, a first copper layer with a thickness of 0.3 mm, a length of 67 mm, and a width of 61 mm 4, a thickness of 0.3 mm, a length of 67 mm, and a width of Put the second copper layer 5 of 61mm into the aluminized mold 11; the center of the first copper layer 4, the second copper layer 5 and the ceramic insulating plate 1 is in a straight line, and make the ceramic insulating plate 1 and the There is a first gap 9 of 0.05 mm between the first copper layers 4 and a second gap 10 of 0.05 mm between the ceramic insulating board 1 and the second copper layer 5 .

[0055] Preheat the aluminized mold 11 to a temperature of 600°C, add molten aluminum at 700°C to the aluminized mold 11, vacuumize the aluminized mold 11 ...

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Abstract

The present disclosure relates to a ceramic aluminum-clad aluminum-copper plate, a method for fabricating the same, a heat dissipating component, and an IGBT module. The ceramic aluminum clad copper plate includes a ceramic insulating plate, a first aluminum layer, a second aluminum layer, a first copper layer, and a second copper layer. The first aluminum layer and the second aluminum layer are integrally molded by aluminizing on two opposite surfaces of the ceramic insulating plate, the ceramic insulating plate isolates the second aluminum layer from the first aluminum layer, and the first copper layer is bonded to the ceramic insulating plate through the first aluminum layer integrally formed by aluminizing; and the second copper layer is connected to the ceramic insulating plate by thesecond aluminum layer integrally formed by aluminizing. The ceramic aluminum-clad copper plate of the present disclosure has fewer voids than the welded ceramic copper-clad plate, and the ceramic-clad aluminum plate has a thinner aluminum layer, thereby improving the thermal conductivity of a heat dissipation component, and the symmetrical structure can make the ceramic sheet have uniform stresson both sides and is not easily bent and destroyed.

Description

technical field [0001] The present disclosure relates to the technical field of heat sinks, in particular to a ceramic aluminum-clad copper plate, a preparation method thereof, a heat dissipation element, and an IGBT module. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor and an insulated gate field effect transistor, and is widely used in various electronic devices. With the development of high-current electronic equipment such as inverters, higher requirements are put forward for the performance of IGBT chips. IGBT chips withstand higher currents, and the heat generated during their work continues to increase. The existing IGBT chip ceramic copper-clad heat conductors are produced using vacuum welding technology. The vacuum welding technology is not only complicated, but the production cycle is long. Bubbles or uneven solder layers during the we...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/373H01L23/15H01L21/48
CPCH01L21/48H01L23/15H01L23/3735H01L23/367H01L23/373
Inventor 刘成臣徐强林信平
Owner BYD CO LTD
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