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A dual-band ultraviolet photodetection device and its preparation method

An electrical detector, ultraviolet light technology, applied in the field of microelectronics, can solve the problems of single, unable to realize dual-band optical signal detection, etc.

Active Publication Date: 2020-06-19
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, most photodetector devices can only detect signals within a relatively single spectral response range. However, for optical wavelength division multiplexing technology, multi-spectral measuring instruments, and laser warnings, it is necessary to be able to simultaneously detect signals within multiple spectral response ranges. light signal
[0004] Therefore, to solve the problem that existing photodetector devices cannot detect dual-band optical signals, the development of ultraviolet photodetector devices with multi-spectral response ranges is of great significance for the future detection of multi-band signals.

Method used

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  • A dual-band ultraviolet photodetection device and its preparation method
  • A dual-band ultraviolet photodetection device and its preparation method
  • A dual-band ultraviolet photodetection device and its preparation method

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Embodiment 1

[0033] See figure 1 , figure 1 The device structure diagram for preparing the dual-band ultraviolet photodetection device provided by the embodiment of the present invention. As shown in the figure, the preparation equipment includes a radio frequency power supply 4, two target containers 5, two target baffles 6, an air inlet 7, an exhaust pipe 8, a substrate baffle 9, a tray 10, a substrate heating Disk 11 , spinner 12 and sputtering chamber 13 . The radio frequency power supply 4 is connected to the target container 5 through the sputtering chamber 13 to provide power for the sputtering target. The target container 5 includes symmetrically placed Ga 2 o 3 Target and In 2 o 3 The two target containers of the target, and the two target baffles 6 are respectively arranged above the two target containers. The gas inlet 7 can be provided with a plurality of gas pipes, and different gases can be fed in respectively. In this embodiment, the gas inlet 7 can be fed into the sp...

Embodiment 2

[0061] See Figure 4 , Figure 4 A schematic cross-sectional structure diagram of a dual-band ultraviolet photodetection device provided by an embodiment of the present invention. Such as Figure 4 As shown, the dual-band ultraviolet photodetection device includes a substrate 1 , a light-absorbing layer 2 and interdigital electrodes 3 . The substrate 1, the light absorbing layer 2, and the interdigitated electrodes 3 are arranged vertically from bottom to top in order to form a multi-layer structure, constituting a dual-band ultraviolet photodetection device.

[0062] Wherein, the substrate 1 is a double-sided polished C-plane sapphire substrate with a thickness of 200-600 μm; the light absorbing layer 2 is made of (In x Ga 1-x ) 2 o 3 The material is formed with a thickness of 300±5nm; the thickness of the interdigital electrode 3 is 120±5nm, and the size is: finger length 2800 μm, finger width 200 μm, and finger spacing 200 μm.

[0063] The dual-band ultraviolet photo...

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Abstract

The invention relates to a double-waveband ultraviolet photoelectric detector and a preparation method thereof. The preparation method includes: selecting a substrate; growing a light absorption layeron the surface of the substrate; forming an interdigital electrode on the surface of the light absorption layer. The double-waveband ultraviolet photoelectric detector comprises the substrate, the ultraviolet absorption layer made of a (InxGa1-x)2O3 material and the interdigital electrode; under different In component conditions, an optical band gap of the (InxGa1-x)2O3 material changes (4.9-8.9eV); under high In component conditions, two optical band gaps are generated through phase separation of the (InxGa1-x)2O3 material, induction of two ultraviolet spectral ranges is realized, and accordingly double-waveband optical signal detection is realized.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a dual-band ultraviolet photodetection device and a preparation method thereof. Background technique [0002] In recent years, with the development of science and technology and the continuous maturity of photoelectric technology, ultraviolet photodetection devices have been widely used in civilian and military fields. Detectors for UV imaging can be roughly divided into two categories: photocathode detectors and semiconductor detectors. Photocathode detectors mainly include ultraviolet vacuum diodes, separated ultraviolet photomultiplier tubes, imaging ultraviolet image converters, ultraviolet intensifiers, and ultraviolet camera tubes. Due to the high detection sensitivity, the photomultiplier tube has been successfully applied in ultraviolet detection, but due to its large size, high power consumption, high operating voltage, and the need for optical filt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/032H01L31/09
CPCH01L31/0321H01L31/09H01L31/18Y02P70/50
Inventor 贾仁需余建刚董林鹏杨茜
Owner XIDIAN UNIV