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A silicon germanium quantum well electro-refractive index modulator and integrated optoelectronic device

A refractive index modulation, silicon quantum technology, applied in instruments, optics, nonlinear optics, etc., can solve problems such as difficult to control speed, poor coupling effect, etc., achieve significant changes in refractive index, easy to achieve accurate growth, changes in light absorption spectrum significant effect

Active Publication Date: 2020-05-19
HUAZHONG UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the defects of the prior art, the purpose of the present invention is to solve the technical problems of the prior art that coupling occurs when no voltage is applied, the coupling effect is poor, and the speed is difficult to control during the preparation process

Method used

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  • A silicon germanium quantum well electro-refractive index modulator and integrated optoelectronic device
  • A silicon germanium quantum well electro-refractive index modulator and integrated optoelectronic device
  • A silicon germanium quantum well electro-refractive index modulator and integrated optoelectronic device

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Embodiment Construction

[0025] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0026] Such as figure 1 As shown, a germanium-silicon quantum well electrorefractive index modulator, which is sequentially from bottom to top: P-type silicon substrate 1, P-type germanium-silicon alloy buffer layer 2, intrinsic germanium-silicon alloy lower isolation layer 3, The intrinsic germanium silicon alloy coupling quantum well layer 4 , the intrinsic germanium silicon alloy upper isolation layer 5 , and the N-type germanium silicon alloy capping layer 6 .

[0027] The P-type germanium-silicon alloy buffer layer 2 is used to release the stress caused by lattice mismatch during material gro...

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Abstract

The invention discloses an electrostrictive-refractive-index modulator with silicon germanium quantum wells and an integrated photoelectronic device. The modulator comprises a P-type silicon substrate, a P-type silicon germanium alloy buffer layer, an intrinsic silicon germanium alloy lower isolation layer, an intrinsic silicon germanium alloy coupling quantum well layer, an intrinsic silicon germanium alloy upper isolation layer and an N-type silicon germanium alloy cover layer. The intrinsic silicon germanium alloy coupling quantum well layer is composed of multiple non-symmetric coupling quantum wells, each non-symmetric coupling quantum well is composed of two quantum wells different in width, a middle thin barrier and two side-edge barriers, every two adjacent non-symmetric coupling quantum wells share one side-edge barrier area, the component proportion of silicon germanium alloy of every two side-edge barriers is identical, and the Ge content of the middle thin barriers must belower than that of the two side-edge thin barriers. The barrier height of the non-symmetric coupling quantum wells, with low Ge content, of a middle barrier area is higher than that of barrier areas of the two sides, coupling of the quantum wells of the two sides of each middle barrier area is prevented when an extra electric field does not exist, and when coupling happens in an electric field, the coupling control effect on the two quantum wells is better.

Description

technical field [0001] The invention belongs to the technical field of integrated optoelectronic devices, and more specifically relates to an electric-induced refractive index modulator of germanium-silicon quantum wells and an integrated optoelectronic device. Background technique [0002] With the rapid development of optical communication and optical interconnection, optoelectronic integrated circuits play an increasingly important role in data transmission. Due to its compatibility with mature CMOS technology, silicon-based optoelectronics is considered to be the most promising platform for the integration of electronic and photonic devices. High-efficiency and compact silicon-based optoelectronic devices are the prerequisite for realizing large-scale optoelectronic integrated systems, and an optical modulator compatible with CMOS process, high performance and low power consumption is a key device for optical communication and optical interconnection systems. [0003] A...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/015G02F1/017
CPCG02F1/015G02F1/017G02F1/0151G02F1/0153
Inventor 孙军强张意
Owner HUAZHONG UNIV OF SCI & TECH
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