A silicon germanium quantum well electro-refractive index modulator and integrated optoelectronic device

Abstract

The invention discloses an electrostrictive-refractive-index modulator with silicon germanium quantum wells and an integrated photoelectronic device. The modulator comprises a P-type silicon substrate, a P-type silicon germanium alloy buffer layer, an intrinsic silicon germanium alloy lower isolation layer, an intrinsic silicon germanium alloy coupling quantum well layer, an intrinsic silicon germanium alloy upper isolation layer and an N-type silicon germanium alloy cover layer. The intrinsic silicon germanium alloy coupling quantum well layer is composed of multiple non-symmetric coupling quantum wells, each non-symmetric coupling quantum well is composed of two quantum wells different in width, a middle thin barrier and two side-edge barriers, every two adjacent non-symmetric coupling quantum wells share one side-edge barrier area, the component proportion of silicon germanium alloy of every two side-edge barriers is identical, and the Ge content of the middle thin barriers must belower than that of the two side-edge thin barriers. The barrier height of the non-symmetric coupling quantum wells, with low Ge content, of a middle barrier area is higher than that of barrier areas of the two sides, coupling of the quantum wells of the two sides of each middle barrier area is prevented when an extra electric field does not exist, and when coupling happens in an electric field, the coupling control effect on the two quantum wells is better.

Description

technical field [0001] The invention belongs to the technical field of integrated optoelectronic devices, and more specifically relates to an electric-induced refractive index modulator of germanium-silicon quantum wells and an integrated optoelectronic device. Background technique [0002] With the rapid development of optical communication and optical interconnection, optoelectronic integrated circuits play an increasingly important role in data transmission. Due to its compatibility with mature CMOS technology, silicon-based optoelectronics is considered to be the most promising platform for the integration of electronic and photonic devices. High-efficiency and compact silicon-based optoelectronic devices are the prerequisite for realizing large-scale optoelectronic integrated systems, and an optical modulator compatible with CMOS process, high performance and low power consumption is a key device for optical communication and optical interconnection systems. [0003] A...

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Problems solved by technology

[0005] In view of the defects of the prior art, the purpose of the present invention is to solve the technical problems of the prior art that coupling occurs when no voltage is applied, the coupling effect is poor, and the speed is difficult to control during the preparation process

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