Preparation method of self-biased anisotropy magnetoresistance sensing unit
An anisotropic magnetic and sensing unit technology, which is applied in the fields of magnetic field-controlled resistors, the manufacture/processing of electromagnetic devices, and parts of electromagnetic equipment, can solve problems such as complex processes and structures, and excessive volume, and achieve The structure is simple, easy to control, and the effect of reducing the difficulty of preparation
Active Publication Date: 2019-02-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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[0006] In view of the above-mentioned problems or deficiencies, in order to solve the problems of complex process and structure and relatively large volume in order to solve the problem of biasing the magnetic moment by 45° after the preparation of the existing elongated resistive film
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[0024] The technical scheme of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0025] A method for preparing a self-biased anisotropic magnetoresistance sensing unit, comprising the following steps:
[0026] Step 1: Select Si / SiO 2 As the substrate material, the standard lift-off photolithography process is used to expose the unit pattern of the strip-shaped anisotropic magnetoresistance sensing unit. The long axis of the strip-shaped anisotropic magnetoresistance sensing unit is 50 μm, The short axis is 10 μm.
[0027] Step 2: Place the exposed substrate with strip-shaped anisotropic magnetoresistance sensing unit in a magnetron sputtering device, and deposit Ta(5nm) / NiFe(25nm) / FeMn( 15nm) / Ta(5nm) anisotropic magnetoresistance sensing unit film. During the film deposition process, an external magnetic field of 300Gs is applied along the short axis of the strip-shaped anisotropic magnetoresistive sensi...
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Abstract
The invention belongs to the technical fields of magnetic materials and components, in particular to a preparation method of a self-biased anisotropy magnetoresistance sensing unit. According to the preparation method, a ferromagnetic layer / reverse ferromagnetic layer thin film is used for replacing a conventional ferromagnetic layer thin film to prepare the anisotropy magnetoresistance sensing unit. An anisotropy field Hk is generated in the long axis direction by selecting a long strip magnetoresistance sensing unit with relatively large long and short axis, a deposition magnetic field is added along the short axis of the long-strip-shaped magnetoresistance sensing unit in the preparation method to generate an exchange bias field Hex in the short axis direction of the outer magnetic field; and exchange bias field and the anisotropy field tend to be equal in sizes, and a required included angle of 45 degrees between orientation of the initial state magnetic moment and the current flowing along the long axis can be formed. According to the preparation method, the self-bias of the initial magnetic moment of 45 degrees is realized, the structure is simple, and the process difficultyis low, and easy control and no need of extra external magnetic field equipment are realized, so that the preparation difficulty of the magnetic sensing unit is greatly lowered.
Description
technical field [0001] The invention belongs to the technical field of magnetic materials and components, and relates to magnetic sensing technology, in particular to a preparation method of a self-biased anisotropic magnetoresistance sensing unit. Background technique [0002] The anisotropy magnetoresistance (AMR) effect means that when the current flows through the magnetic material, if the magnetization direction of the magnetic material changes relative to the direction of the current, the resistance of the magnetic material will change. The anisotropic magnetoresistance effect is a key effect used in the current magnetic sensor family due to the simple material used for realization and high stability, and has a wide range of application space. [0003] The size of the anisotropic magnetoresistance can be expressed as: R=R 0 +ΔRcos 2 α, where R is the magnetoresistance, R 0 It is the resistance measured when the magnetic field is zero, ΔR=R 平行 -R 垂直 (R 平行 is the r...
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Patent Timeline
Login to View More IPC IPC(8): H01L43/12H01L43/02H01L43/08H01L43/10
CPCH10N50/80H10N50/85H10N50/10H10N50/01
Inventor 唐晓莉杜伟苏桦
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA