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Three-layer silicon nitride film preparation method

A silicon nitride thin film, silicon nitride technology, applied in final product manufacturing, sustainable manufacturing/processing, semiconductor/solid-state device manufacturing, etc., can solve uneven temperature field, increase production cost, increase the proportion of reworked wafers, etc. problems, to reduce damage, save energy, and promote the inward diffusion of H

Active Publication Date: 2019-02-19
HANWHA SOLARONE QIDONG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the silicon nitride deposition method in the existing process is basically constant temperature and constant power supply, which is prone to uneven temperature field, increases the proportion of reworked chips, and increases production costs.

Method used

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Embodiment 1

[0030] refer to Figures 1 to 2 , a method for preparing a three-layer silicon nitride film of the present embodiment, comprising the following steps:

[0031] Step S1: Prepare materials

[0032] Prepare silicon wafers that are clean and have completed texturing, diffusion, etching and other processes.

[0033] Step S2: Prepare the first film

[0034] Put the silicon wafer into the deposition equipment, and pass the reaction gas SiH into the deposition chamber 4 and NH 3 And by setting the first deposition condition, the first layer of silicon nitride film is deposited on the silicon wafer.

[0035] The first deposition condition is: the deposition temperature is uniformly decreased from 480°C at a rate of 5°C / min, the power used is 5000W, the deposition time is 150s, NH 3 Flow 4.53slm, SiH 4 The flow rate is 1130sccm, the pressure is 2000mTorr, and the power switch ratio is 4 / 28. mTorr is the pressure unit, which is the pressure in microns of mercury, that is, one thousa...

Embodiment 2

[0050] refer to figure 1 with image 3 , a method for preparing a three-layer silicon nitride film of the present embodiment, comprising the following steps:

[0051] Step S1: Prepare materials

[0052] Prepare silicon wafers that are clean and have completed texturing, diffusion, etching and other processes.

[0053] Step S2: Prepare the first film

[0054] Put the silicon wafer into the deposition equipment, and pass the reaction gas SiH into the deposition chamber 4 and NH 3 And by setting the first deposition condition, the first layer of silicon nitride film is deposited on the silicon wafer.

[0055] The first deposition condition is: the deposition temperature is uniformly decreased from 500°C at a rate of 5°C / min, the power used is 6500W, the deposition time is 130s, NH 3 Flow 5.6slm, SiH 4 The flow rate is 1130sccm, the pressure is 1500mTorr, and the power switch ratio is 4 / 36.

[0056] Step S3: Prepare the second film

[0057] Continue to feed reaction gas S...

Embodiment 3

[0063] refer to figure 1 with Figure 4 , a method for preparing a three-layer silicon nitride film of the present embodiment, comprising the following steps:

[0064] Step S1: Prepare materials

[0065] Prepare silicon wafers that are clean and have completed texturing, diffusion, etching and other processes.

[0066] Step S2: Prepare the first film

[0067] Put the silicon wafer into the deposition equipment, and pass the reaction gas SiH into the deposition chamber 4 and NH 3 And by setting the first deposition condition, the first layer of silicon nitride film is deposited on the silicon wafer.

[0068] The first deposition condition is: the deposition temperature is uniformly decreased from 490°C at a rate of 5°C / min, the power used is 5500W, the deposition time is 140s, NH 3 Flow 5.4slm, SiH 4 The flow rate is 1200sccm, the pressure is 2000mTorr, and the power switch ratio is 3 / 30.

[0069] Step S3: Preparation of the second film

[0070] Continue to feed reacti...

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Abstract

The invention discloses a three-layer silicon nitride film preparation method which includes the steps: (1) material preparation: preparing a semiconductor substrate; (2) first film preparation: placing the semiconductor substrate into a deposition device, setting first deposition conditions, enabling the deposition temperature in the first deposition conditions to be uniformly reduced, and depositing a first silicon nitride film; (3) second film preparation: setting second deposition conditions, enabling the deposition temperature in the second deposition conditions to be uniformly reduced, and forming a second silicon nitride film; (4) third film preparation: setting third deposition conditions, enabling the deposition temperature in the third deposition conditions to be uniformly reduced, and forming a third silicon nitride film. According to the three-layer silicon nitride thin film preparation method, passivation effects and antireflection effects of the silicon nitride film on crystalline silicon solar cells can be effectively improved, and process time is shortened, the deposition temperature is gradually reduced, energy consumption is reduced, and power consumption cost isreduced.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a preparation method for depositing a three-layer silicon nitride film on a semiconductor substrate. Background technique [0002] With the continuous development of photovoltaic technology, crystalline silicon solar cells have developed rapidly as a clean energy product that converts solar energy into electrical energy. [0003] Silicon nitride film has the function of passivating the surface of silicon wafer and anti-reflection. Using PECVD (Plasma Enhanced Chemical Vapor Deposition; plasma enhanced chemical vapor deposition method) to deposit silicon nitride on the surface of the emitter is an important step in the preparation process of crystalline silicon solar cells. one ring. However, the silicon nitride deposition method in the existing technology is basically constant temperature and constant power supply, which is prone to uneven temperature field, inc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/67H01L31/0216
CPCH01L21/67248H01L21/67253H01L31/02167H01L31/02168H01L31/1804Y02E10/547Y02P70/50
Inventor 张晓攀赵福祥崔钟亨
Owner HANWHA SOLARONE QIDONG