zr-cu-al-ti metallic glass films with tunable reflectivity
A technology of zr-cu-al-ti and metallic glass, applied in metal material coating process, sputtering coating, vacuum evaporation coating, etc., can solve the problems of long time consumption, small change range, high cost, etc., and achieve The effect of broad application prospects
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Embodiment 1
[0024] 1) Zr, Cu, Al, and Ti metal raw materials with a mass purity greater than 98% will be used to synthesize the target, and the nominal proportions of Zr, Cu, Al, and Ti will be 46.5at%, 45at%, 7at%, and 1.5at%, and Placed in a limit vacuum of 6.7×10 -8 On the target position of Pa’s multi-target magnetron sputtering coating equipment, the substrate of the target sputtering film adopts a silicon single-sided polished wafer with a diameter of 25.4 mm, a thickness of 1 mm, and a root mean square roughness of 0.6 nm. The crystal plane direction of the single side of the silicon is (100); the polished side of the silicon single side polished piece is facing down, installed on the substrate holder, and the target is adjusted so that the distance from the target surface to the polished piece is 140 mm.
[0025] 2) Vacuum the cavity of the sputtering chamber of the multi-target magnetron sputtering coating equipment until the pressure in the chamber is 5.0×10 -7 Pa, adjust the s...
Embodiment 2
[0031] 1) Zr, Cu, Al, and Ti metal raw materials with a mass purity greater than 98% will be used to synthesize the target, and the nominal proportions of Zr, Cu, Al, and Ti will be 46.5at%, 45at%, 7at%, and 1.5at%, and Placed in a limit vacuum of 6.7×10 -8 On the target position of Pa’s multi-target magnetron sputtering coating equipment, the substrate of the target sputtering film adopts a silicon single-sided polished wafer with a diameter of 25.4 mm, a thickness of 1 mm, and a root mean square roughness of 0.6 nm. The crystal plane direction of the single side of the silicon is (100); the polished side of the silicon single side polished piece is facing down, installed on the substrate holder, and the target is adjusted so that the distance from the target surface to the polished piece is 140 mm.
[0032] 2) Vacuum the cavity of the sputtering chamber of the multi-target magnetron sputtering coating equipment until the pressure in the chamber is 5.0×10 -7 Pa, adjust the s...
Embodiment 3
[0038] 1) Zr, Cu, Al, and Ti metal raw materials with a mass purity greater than 98% will be used to synthesize the target, and the nominal proportions of Zr, Cu, Al, and Ti will be 46.5at%, 45at%, 7at%, and 1.5at%, and Placed in a limit vacuum of 6.7×10-8 On the target position of Pa’s multi-target magnetron sputtering coating equipment, the substrate of the target sputtering film adopts a silicon single-sided polished wafer with a diameter of 25.4 mm, a thickness of 1 mm, and a root mean square roughness of 0.6 nm. The crystal plane direction of the single side of the silicon is (100); the polished side of the silicon single side polished piece is facing down, installed on the substrate holder, and the target is adjusted so that the distance from the target surface to the polished piece is 140 mm.
[0039] 2) Vacuum the cavity of the sputtering chamber of the multi-target magnetron sputtering coating equipment until the pressure in the chamber is 5.0×10 -7 Pa, adjust the sub...
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