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Method for laying seed crystal, preparation method of monocrystalline silicon-like ingot and monocrystalline silicon wafer
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A laying method and seed crystal technology, applied in the direction of single crystal growth, chemical instruments and methods, crystal growth, etc., can solve problems such as side damage, performance degradation of similar single crystal silicon wafers, increase in seed crystal size, etc., and achieve high yield , Improving battery conversion efficiency, improving quality and yield
Inactive Publication Date: 2019-02-26
LDK SOLAR XINYU HI TECH XINYU CO LTD
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It can be seen that when a certain number and a certain size of seed crystals are seamlessly laid on the bottom of crucible 1, the seed crystals 2 will expand due to the temperature rise of the ingot casting furnace, the size of the seed crystals will increase, and the seed crystals will squeeze each other, resulting in The side is damaged, resulting in dislocations, which cause dislocations to multiply during seed growth, and the dislocations in the crystal tend to grow in a divergent manner, causing the performance of similar single crystal silicon wafers to decline
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[0050] The present invention also provides a method for preparing a kind of monocrystalline silicon ingot, comprising:
[0051] A crucible is provided, and a seed crystal is laid on the bottom of the crucible to form a seed crystal layer, wherein a gap is provided between any two adjacent seed crystals and between the seed crystal close to the side wall of the crucible and the side wall of the crucible, and the width of the gap is less than 1mm ;
[0052] Fill the silicon material on the seed crystal layer, heat the silicon material in the crucible to melt to form a silicon melt, adjust the thermal field to form a supercooled state, so that the silicon melt begins to grow crystals on the basis of the seed crystal layer, and wait for the entire silicon melt to crystallize Afterwards, annealed and cooled to obtain a quasi-single crystal silicon ingot.
[0053] In the embodiment of the present invention, the width of the gap is 0.3mm-0.5mm. Specifically, the width of the gap may ...
Embodiment 1
[0064] A seed laying method, comprising:
[0065] Provide a crucible, and lay a layer of (100) seed crystals with a length and width of 100×100 mm and a thickness of 30 mm on the bottom of the crucible in a 5×5 pattern. The gap between the seed crystals is 0.3 mm. The gap between the side walls of the crucible is 0.3 mm, and the schematic diagram of the cross section is shown in image 3 As shown, the top view is as Figure 4 As shown, a seed layer is formed.
Embodiment 2
[0067] A seed laying method, comprising:
[0068] Provide a crucible, and lay a layer of (100) seed crystals with a length and width of 156×156 mm and a thickness of 20 mm on the bottom of the crucible in a 6×6 manner. The gap between the seed crystals is 0.45 mm. The gap between the side walls of the crucible is 0.45mm, and the top view is as follows Figure 5 As shown, a seed layer is formed.
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Abstract
The invention provides a method for laying a seed crystal. The method comprises the following steps: providing a crucible, and laying seed crystals at the bottom of the crucible to form a seed crystallayer, wherein gaps are formed between any two adjacent seed crystals and between the seed crystals, adjacent to the side wall of the crucible, and the side wall of the crucible, and the gaps have the width being less than 1 mm. By forming the gaps between any two adjacent seed crystals and between the seed crystals, adjacent to the side wall of the crucible, and the side wall of the crucible, extrusion caused by thermal expansion of the seed crystals during the preparation of a subsequent monocrystalline silicon-like ingot is avoided, and damage to the side surfaces of the seed crystals andthe generation of dislocations are avoided; the prepared monocrystalline silicon-like ingot has no dislocations; and the quality and the yield of the monocrystalline silicon-like ingot are improved.
Description
technical field [0001] The invention relates to the field of photovoltaic or semiconductor technology, in particular to a method for laying a seed crystal, a method for preparing a quasi-single crystalsilicon ingot and a quasi-single crystalsiliconwafer. Background technique [0002] At present, the preparation methods of quasi-monocrystalline silicon ingots are mainly seedless seeding method and seeded seeding method. Seed crystal seeding method is to first lay the single crystal silicon seed crystal on the bottom of the quartz crucible, keep the seed crystal incompletely melted during the melting stage, and perform seed growth on the single crystal silicon seed crystal to obtain a single crystal silicon ingot. figure 1 It is the laying method of seed crystals in the prior art, and there is no gap between the seed crystals. The photoluminescence spectrum diagram of the single crystal silicon ingot silicon wafer prepared by this laying method is as follows: figure 2 sho...
Claims
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Application Information
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