Wireless charging system
A wireless charging and capacitor technology, applied in circuits, current collectors, electric vehicles, etc., can solve the problems of high energy consumption of equipment, energy conversion rate of less than 50%, energy loss, etc., to improve conversion efficiency and solve low conversion efficiency Effect
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Embodiment 1
[0023] See figure 1 , figure 1 It is a schematic schematic diagram of a wireless charging system provided by an embodiment of the present invention. Including: a power supply module 101, a first rectification module 102, a filter module 103, a microwave excitation module 104, a power module 105, a transmitting antenna 106, a receiving antenna 107, a second rectification module 108 and an energy storage module 109; wherein the power supply module 101. The first rectifying module 102, the filtering module 103, the microwave excitation module 104, the power module 105 and the transmitting antenna 106 are electrically connected in sequence; the transmitting antenna 106 and the receiving antenna 107 are electromagnetically Coupling: the receiving antenna 107, the second rectifying module 108 and the energy storage module 109 are electrically connected in sequence.
[0024] Preferably, the first rectification module 102 may include a full-wave bridge rectification circuit.
[002...
Embodiment 2
[0033] On the basis of the above embodiments, this embodiment provides a Schottky diode used in a rectifier circuit of a wireless charging system, please refer to image 3 , image 3 A schematic structural diagram of a Schottky diode provided by an embodiment of the present invention.
[0034] The Schottky diode provided in this embodiment includes: a Si substrate 201, a first Ge layer 202, a second Ge layer 203, a SiGe / Ge strained superlattice intercalation layer 204, a first N-type tensile strained Ge layer 205, a second Ge layer Two N-type tensile strained Ge layers 206, a first metal layer 207 and a second metal layer 208, wherein the first Ge layer 202 is arranged on the surface of the Si substrate 201; the second Ge layer 203 is arranged on The surface of the first Ge layer 202; the SiGe / Ge strained superlattice intercalation layer 204 is arranged on the surface of the second Ge layer 203; the first N-type tensile strained Ge layer 205 is arranged on the second Ge layer...
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