Storage medium and testing method for electrical parameter of wafer-level integrated circuit
A technology of electrical parameters and integrated circuits, applied in circuits, semiconductor/solid-state device testing/measurement, electrical components, etc., can solve the problem of improving test efficiency without substantial contribution, cannot avoid unified test structure testing, and cannot meet high-speed measurement. Urgent needs and other issues to achieve the effect of improving test efficiency, shortening test time, and improving service life
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[0059] Such as figure 2 As shown, this embodiment provides a method for testing electrical parameters of a wafer-level integrated circuit, the method comprising the following steps:
[0060] a) Divide the test plan group according to the electrical parameters of the structure to be tested and the environmental parameters required for the test; among them, the specific content of the test plan can be found in image 3 . In order to further illustrate the technical solution of the present embodiment, the above-mentioned process is described in detail: when testing Ids, the range is 1e -3 A, the protection current is 1e -3 A, The test with the working voltage of the addressing circuit at 1.8V is divided into one group. If there are different configuration parameters, they need to be divided into another group. The measurement of all test structures in a group only needs to configure the environmental parameters once. For the current highly integrated chips, it avoids the tim...
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