A method for testing electrical parameters of storage media and wafer-level integrated circuits
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 杭州广立测试设备有限公司
- Publication Date
- 2020-11-17
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Abstract
Description
technical field
[0001] The present invention relates to the field of integrated circuit industry chain, in particular to a storage medium and a method for testing electrical parameters of wafer-level integrated circuits. Background technique
[0002] In the integrated circuit industry chain, integrated circuit testing is an important step throughout the entire process of integrated circuit production and application. In the production cycle of a wafer, it goes through dozens or even hundreds of different processes. The deviation of any process step in the whole manufacturing process will affect the yield, which makes the yield of the finished wafer very high. great uncertainty. In addition, the investment in integrated circuit manufacturing is huge. An ordinary production line often costs hundreds of millions of dollars, and the cost of advanced production lines is even higher. Therefore, in order to improve the chip maturity cycle and save manufacturing costs, it is neces...