Quantum dot light-emitting layer raw material preparation method and light-emitting device applying method

Abstract

The invention discloses a quantum dot light-emitting layer raw material preparation method and a light-emitting device applying the method, and aims to solve the problem that the photoelectric effectof a device is influenced due to unbalanced carrier injection in an existing QLED device and the like; the key points of the technical scheme are as follows: the method comprises the following steps of 1, selecting a core of a quantum dot, wherein the core comprises one or more of an II-V group compound semiconductor, an III-V group compound semiconductor, and an IV-VI group compound semiconductor; 2, determining a shell of the quantum dots needing to be generated, wherein the shell comprises one or more of ZnS, ZnSe, CdS, CdSe, CdZnS, CdZnSe or CdZnSeS; and 3, preparing the quantum dot and carrying out a nano-particle one-pot synthesis method, wherein the quantum dot light-emitting layer raw material is prepared according to the quantum dot and the nano-particle one-pot synthesis method,based on the core selected in the step 1 and the shell selected in the step 2, so that the problem that the carrier injection of the QLED device is unbalanced and the leakage current is high can be solved, and the photoelectric effect is enhanced.

Description

technical field [0001] The invention relates to the field of photoelectric elements, more specifically, it relates to a method for preparing quantum dot light-emitting layer raw materials and a light-emitting device using the method. Background technique [0002] Quantum dot light-emitting diode (QLED) based on fluorescent semiconductor quantum dots has the advantages of simple preparation process, long life, high color purity, moderate color temperature, and good stability, and has great potential in the fields of next-generation lighting and flat panel displays application prospects. [0003] At present, under the unremitting research of the vast number of scientific researchers, both the performance parameters of quantum dot materials and quantum dot light-emitting diodes have been greatly improved. However, there are still many problems to be solved in QLED at present, especially the imbalance of electron and hole injection, which has a great impact on the lifetime and ...

AI Technical Summary

Problems solved by technology

This method requires precise control of the thickness of the insulating layer, which increases the difficulty of mass production;

[0006] 2. Replace the traditional organic hole transport layer with inorganic oxides such as NiO to increase the efficiency of hole injection, but the advantages of this method have not been clearly reflected so far;

Although the material of the transport layer is consistent with the shell material of the quantum dot light-emitting layer, this method does not fully consider the contradiction between the surface ligands and the orthogonal solvent selection of the two, as well as the consistency of the phase structure; at the same time, the sol-gel Processes such as chemical baths or chemical baths may cause damage to the existing functional layer, which also increases the complexity of the process

Images