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Sputtering target cooling device based on IBAD nano-coating equipment

A cooling device, nano-coating technology, applied in the direction of coating, sputtering plating, metal material coating process, etc., can solve the problem of not being able to ensure sufficient contact between cooling water and the back plate, reducing the cooling effect of the sputtering target, and affecting Problems such as sputtering target cooling effect, to reduce quality and production continuity, avoid water leakage, and improve cooling effect

Inactive Publication Date: 2019-03-08
EASTERN SUPERCONDUCTOR SCI & TECH SUZHOU CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, it is pointed out in the specification that the bonding material combines the target, the back plate, the buffer plate 3a, and the buffer plate 3b, but the use of the bonding material will affect the sealing of the sputtering target, and the bonding material will also affect the cooling effect of the sputtering target
In addition, the cooling channel opened on the back plate cannot ensure sufficient contact between the cooling water and the back plate, reducing the cooling effect of the sputtering target

Method used

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  • Sputtering target cooling device based on IBAD nano-coating equipment
  • Sputtering target cooling device based on IBAD nano-coating equipment
  • Sputtering target cooling device based on IBAD nano-coating equipment

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Embodiment Construction

[0030] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand the present invention and implement it, but the examples given are not intended to limit the present invention.

[0031] refer to figure 1 As shown, an embodiment of the sputtering target based on IBAD nano-coating equipment of the present invention includes the body, because the IBAD equipment requires a high degree of vacuum, which needs to be within 4.5*10 -7 torr can be used for thin film preparation, and the target needs to be cleaned before each process. The target is fixed on the cooling device. Cleaning the target will shake the cooling device, which will loosen the screws and cause water leakage, which will destroy the vacuum state and affect the film preparation. Therefore, in this embodiment, the body is integrally formed, and the integrally formed body can reduce sealing problems...

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Abstract

The invention discloses a sputtering target cooling device based on IBAD nano-coating equipment. The sputtering target cooling device comprises a body integrally formed, wherein a water inlet, a wateroutlet and a guiding groove for limiting cooling liquid are formed in the body; the water inlet and the water outlet are formed in the two ends of the guiding groove separately; and the envelope lineof the guiding groove is rectangular. The sputtering target cooling device can improve the cooling effect while ensuring the leakproofness.

Description

technical field [0001] The invention relates to the technical field of sputtering target cooling, in particular to a sputtering target cooling device based on IBAD nano-coating equipment. Background technique [0002] The second-generation high-temperature superconducting material has the characteristics of complete zero resistance and complete diamagnetism at low temperature. Its characteristics have great application prospects in the fields of national defense, industry, scientific research, and medicine. Governments of all countries attach great importance to the research of superconducting materials. Since the coherence length of the second-generation superconducting thin film is only 7nm, when the grain boundary angle of the thin film is greater than 4 degrees, a weak connection effect will be formed, thereby affecting the superconducting critical current. Since superconducting thin films are polycrystalline thin films, and we need to grow crystal thin films on amorpho...

Claims

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Application Information

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IPC IPC(8): C23C14/34
CPCC23C14/3407
Inventor 李小宝周国山夏佑科沈玉军陈慧娟蔡渊
Owner EASTERN SUPERCONDUCTOR SCI & TECH SUZHOU CO LTD
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