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An oled device

A device and infrared light-emitting technology, which is applied in the field of OLED devices, can solve problems such as voltage rise, and achieve the effects of alleviating voltage rise, excellent high temperature resistance, and improving luminous efficiency

Active Publication Date: 2021-03-02
GUAN YEOLIGHT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, thermally activated delayed fluorescent materials have better effects at higher temperatures. At the same time, in terms of reliability, current OLED devices have problems such as voltage rise due to the decrease in carrier mobility at low temperatures.

Method used

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  • An oled device
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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Please refer to figure 1 , this embodiment provides an OLED device, including a first electrode 1 , an organic functional layer 2 and a reflective electrode 3 arranged in sequence. The device structure of this embodiment is a three-layer device, the organic functional layer 2 has three independent light-emitting layers 21 , and a CGL charge generation layer 22 is arranged between adjacent light-emitting layers 21 . From the first electrode 1 to the reflective electrode 3, the three different light-emitting layers in the organic functional layer are the blue light-emitting layer with a light-emitting wavelength of 470nm, the orange-yellow light-emitting layer with a light-emitting wavelength of 560nm, and the infrared light-emitting layer with a light-emitting wavelength of 780nm. Among them, the light-emitting layer with a light-emitting wavelength of 470nm uses thermally activated delayed fluorescent material DMOC-DPS, the light-emitting layer with a light-emitting wav...

Embodiment 2

[0035] Please refer to figure 1 , this embodiment provides an OLED device, including a first electrode 1 , an organic functional layer 2 and a reflective electrode 3 arranged in sequence. The device structure of this embodiment is a three-layer device, the organic functional layer 2 has three independent light-emitting layers 21 , and a CGL charge generation layer 22 is arranged between adjacent light-emitting layers 21 . The three different light-emitting layers in the organic functional layer from the first electrode 1 to the reflective electrode 3 are an infrared light-emitting layer with a dominant wavelength of 780 nm, a blue light-emitting layer with a light-emitting wavelength of 470 nm, and an orange-yellow light-emitting layer with a light-emitting wavelength of 560 nm. Among them, the light-emitting layer with a light-emitting wavelength of 470nm uses thermally activated delayed fluorescent material DMOC-DPS, the light-emitting layer with a light-emitting wavelength ...

Embodiment 3

[0045] Please refer to figure 2 , this embodiment provides an OLED device, including a first electrode 1 , an organic functional layer 2 and a reflective electrode 3 arranged in sequence. The device structure of this embodiment is a single-layer structure. The organic functional layer 2 includes two light-emitting layers 21, which are an infrared light-emitting layer and a blue heat-activated delayed fluorescent material light-emitting layer. The light-emitting spectra are 700nm and 470nm respectively. When the device operates at a low temperature (-40°C) with a fixed output brightness, it is 5.2V. After 5 minutes of operation, the voltage drops to 4.3V at the same brightness, which effectively improves the operating characteristics of the device at low temperature. And because of the reason under infrared irradiation, more triplet excitons in the thermally activated delayed fluorescent material are transformed into singlet excitons through reverse intersystem crossing, there...

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Abstract

The application discloses an OLED device, which includes a first electrode, an organic functional layer and a reflective electrode arranged in sequence; the organic functional layer includes at least one infrared light-emitting layer and at least one heat-activated delayed fluorescent material light-emitting layer. In this application, through the combination of infrared OLED light-emitting materials and phosphorescence, fluorescent materials or heat-activated delayed fluorescent materials, the infrared rays emitted by the infrared light-emitting layer can be used to heat other functional materials to improve the carrier mobility of organic functional materials in low-temperature environments. Alleviate the phenomenon of device voltage rise, thereby improving the stability of the device at low temperature and reducing the operating voltage. In addition, the present application uses the infrared rays emitted by the infrared light-emitting layer to heat the thermally activated delayed fluorescent material, so that more triplet excitons in the thermally activated delayed fluorescent material can be transformed into singlet excitons to emit light through reverse intersystem crossing, thereby The luminous efficiency is improved.

Description

technical field [0001] The application belongs to the technical field of organic electroluminescence, and specifically relates to an OLED device. Background technique [0002] OLED (Organic Light Emitting Diode, Chinese name organic light-emitting display) refers to the phenomenon that organic semiconductor materials and light-emitting materials are driven by an electric field to cause light emission through carrier injection and recombination. Displays or lighting products made according to this light-emitting principle are called organic light-emitting displays or organic light-emitting lighting products. [0003] OLED (Organic Light Emitting Diode), as a new generation of display and lighting technology, has shown great potential for development. At present, as a lighting technology, the improvement of efficiency and life of OLED is still the key. [0004] OLED material systems are generally divided into fluorescent materials, phosphorescent materials, and thermally acti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50
CPCH10K50/131
Inventor 朱映光李育豪郭立雪于倩倩谢静胡永岚
Owner GUAN YEOLIGHT TECH CO LTD