Evaluation method and manufacturing method of silicon wafer

Abstract

The object of the present invention is to evaluate the presence or absence and types of defect regions of a silicon wafer by a simple method while reducing time and cost. An evaluation method of a silicon wafer, which is an evaluation method of a silicon wafer cut out from a single crystal silicon ingot grown by the Czochralski method, wherein the heat generated when a heat donor is applied to the silicon wafer to generate heat is measured The generation rate of the donor (S14), and the presence or absence of the crystal defect region and the type of the crystal defect are discriminated based on the generation rate of the heat donor (S15).

Description

technical field [0001] The present invention relates to an evaluation method and a manufacturing method of a silicon wafer, and more particularly to a method of evaluating a crystal defect region of a silicon wafer manufactured by the Czochralski method (hereinafter referred to as "CZ method"). Background technique [0002] There are various methods for producing single crystal silicon used as a semiconductor material, but the CZ (Czochralski) method or the FZ (Floating Zone) method is generally used. The CZ method is a method in which a polycrystalline raw material filled in a quartz crucible is heated and melted by a heater, a seed crystal is immersed in the melt, and the seed crystal is pulled upward while rotating to grow a single crystal. In addition, the FZ method is a method in which a part of a polycrystalline raw material rod is melted by high-frequency heating to form a molten region, and a single crystal is grown while moving the molten region. Since the CZ metho...

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Problems solved by technology

When the V / G is greater than the critical value at which the OSF ring disappears in the center of the crystal, the pores condense to form a hole (void) defect of about 0.1 μm octahedron, which makes the gate oxide film Deterioration of the withstand voltage, or poor isolation of the component isolation area

In addition, when trench capacitors are used, characteristics such as punch-through between capacitors may be poor.

On the other hand, when V / G is smaller than the critical value, the silicon between the crystal lattices aggregates to form dislocation clusters, resulting in poor characteristics such as PN junction leakage.

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